{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C107D-10VXI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C107D-10VXI","canonicalUrl":"https://icboms.com/infineon/CY7C107D-10VXI","factsUrl":"https://icboms.com/api/mcp/products/CY7C107D-10VXI","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CY7C107D-10VXI, SRAM - Asynchronous, 1Mbit (1M x 1), Parallel, 10 ns access, 4.5V~5.5V, -40°C~85°C, 28-BSOJ, Tube.","salesMarkdown":"The Infineon CY7C107D-10VXI is a 1 Mbit asynchronous SRAM organized 1M x 1, with a 10 ns access time and a parallel interface. It operates from a 4.5 V to 5.5 V supply and is rated over the industrial temperature range of -40°C to 85°C. ## 10 ns access — timing margin for the bus ## Industrial temperature range — fits the factory floor No derating needed for the access time across that span — the 10 ns holds over the full temperature window. Housed in a 28-lead SOJ (Small Outline J-lead) package, body width 10.16 mm. Surface-mount, J-bend leads save board space versus a DIP. The supplier device package is 28-SOJ. Tube shipment.","metaTitle":"Infineon CY7C107D-10VXI SRAM, 1Mbit Async, 10 ns, 28-SOJ","metaDescription":"Infineon CY7C107D-10VXI 1Mbit asynchronous SRAM, 10 ns access, 4.5-5.5V, -40 to 85°C, 28-SOJ. EOL phase — sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tube","Technology":"SRAM - Asynchronous","Access Time":"10 ns","Memory Size":"1Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"28-BSOJ (0.400\\\", 10.16mm Width)","Product Status":"Active","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"4.5V ~ 5.5V","Base Product Number":"CY7C107","Memory Organization":"1M x 1","Operating Temperature":"-40°C~85°C(TA)","Supplier Device Package":"28-SOJ","Write Cycle Time - Word, Page":"10ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$44.3000","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/68cdf54812d6a49ce26a3d805d057c12.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C107D-10VXI/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to CY7C107D-10VXI?","answer":"No official Infineon successor exists. For a new design, consider Alliance Memory AS7C31024B-10TIN or ISSI IS61LV10248-10T — both are 1M x 1, 5 V, 28-SOJ, 10 ns asynchronous SRAMs. Verify timing and package compatibility against your layout before substituting."},{"question":"What is CY7C107D-10VXI's listed package?","answer":"The package is a 28-lead SOJ (Small Outline J-lead), body width 10.16 mm, supplier device package 28-SOJ. It ships in Tube format."},{"question":"What is CY7C107D-10VXI's listed technology?","answer":"It is an asynchronous SRAM — no clock input; address transitions trigger the read/write cycle. Organized 1M x 1 with a parallel interface."},{"question":"What compliance documentation does Infineon provide for CY7C107D-10VXI?","answer":"Infineon provides a datasheet and RoHS compliance declaration for this part. REACH and conflict-minerals reports are available on request through the Infineon compliance portal."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C107D-10VXI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C107D-10VXI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}