{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1062GN30-10BGXI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1062GN30-10BGXI","canonicalUrl":"https://icboms.com/infineon/CY7C1062GN30-10BGXI","factsUrl":"https://icboms.com/api/mcp/products/CY7C1062GN30-10BGXI","rawCanonicalId":null},"summary":{"shortDescription":"Infineon (Cypress) CY7C1062GN30-10BGXI, 16Mbit asynchronous SRAM, 512Kx32 organization, 10 ns access time, 2.2V–3.6V supply, 119-PBGA (14x22 mm) surface-mount, -40°C to 85°C operating temperature, tray.","salesMarkdown":"## 16 Mbit asynchronous SRAM in a 119-ball BGA The part comes in a 119-ball PBGA (14x22 mm) package for surface-mount assembly. This is a volatile, fast static RAM intended for cache, buffer, or working memory in systems that need deterministic read/write timing without refresh cycles. For a 32-bit wide data path, that translates to a theoretical peak bandwidth of 400 MB/s. The write cycle time matches the access time at 10 ns, so back-to-back writes don't incur a penalty. This matters for high-throughput applications like network packet buffers, DSP coefficient storage, or FPGA configuration memory where every nanosecond of latency adds up. ## Package and layout realities The 119-ball PBGA (14x22 mm) is a fine-pitch BGA. The 512K x 32 organisation means 32 data lines plus address and control signals — expect a dense fan-out. Plan for at least four-layer PCB with microvias or via-in-pad if the ball pitch is 0.8 mm or finer. Decoupling should follow the datasheet recommendation: a 0.1 µF ceramic per supply pin pair, placed as close to the balls as the layout allows. For BOM qualification, the active status means no immediate supply risk from end-of-life.","metaTitle":"Infineon CY7C1062GN30-10BGXI 16Mbit Async SRAM, 10 ns","metaDescription":"Infineon CY7C1062GN30-10BGXI 16Mbit asynchronous SRAM, 512Kx32, 10 ns access, 2.2V–3.6V, -40°C to 85°C, 119-PBGA. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"title":"CY7C1062GN30-10BGXI","Package":"Tray","Technology":"SRAM - Asynchronous","Access Time":"10 ns","Memory Size":"16Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"119-BGA","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"2.2V ~ 3.6V","Base Product Number":"CY7C1062","Memory Organization":"512K x 32","Operating Temperature":"-40°C ~ 85°C (TA)","Supplier Device Package":"119-PBGA (14x22)","Write Cycle Time - Word, Page":"10ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$44.6766","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ececd5ea2a2461af55a06268d196d172.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1062GN30-10BGXI/alternatives.json"},"ai":{"faq":[{"question":"Is CY7C1062GN30-10BGXI compatible with 3.3V logic?","answer":"The I/O levels track Vdd, so at 3.3 V supply the inputs and outputs are 3.3 V CMOS-compatible."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1062GN30-10BGXI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1062GN30-10BGXI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}