{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1041GN30-10ZSXI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1041GN30-10ZSXI","canonicalUrl":"https://icboms.com/infineon/CY7C1041GN30-10ZSXI","factsUrl":"https://icboms.com/api/mcp/products/CY7C1041GN30-10ZSXI","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies CY7C1041GN30-10ZSXI asynchronous SRAM, 4Mbit (256K x 16), 10 ns access time, 2.2 V to 3.6 V supply, -40°C to +85°C industrial temperature, 44-TSOP II package, Tray.","salesMarkdown":"## 10 ns asynchronous SRAM for cache and buffer duty The CY7C1041GN30-10ZSXI is a 4 Mbit asynchronous SRAM from Infineon Technologies, organized as 256K words by 16 bits. The 10 ns access time sets the read-cycle ceiling — at this speed the part serves as a look-up table, packet buffer, or CPU cache in systems where a clocked SRAM interface adds unnecessary complexity. ## Package and board-fit constraints Housed in a 44-TSOP II package (0.400-inch body width, 10.16 mm), the part mounts on the PCB surface with a standard JEDEC footprint. The 44-pin TSOP II layout is shared across multiple SRAM densities in the CY7C1041 family, so a single board layout can accept 4 Mbit, 8 Mbit, or 16 Mbit variants with the same pinout — useful for a BOM that scales memory across product tiers. Supplied in Tray packaging, the device is suited for pick-and-place assembly in medium-to-high volume production. The parallel memory interface requires 16 data lines plus address and control signals — the PCB routing must match the 10 ns timing budget, particularly the address-to-output propagation delay through the trace length. ## Active lifecycle and compliance posture As a volatile memory device, it requires a continuous power supply to retain data; no battery-backup or non-volatile storage is integrated.","metaTitle":"Infineon CY7C1041GN30-10ZSXI SRAM, 4Mbit, 10 ns, 44-TSOP II","metaDescription":"Infineon CY7C1041GN30-10ZSXI asynchronous SRAM, 4Mbit (256K x 16), 10 ns access, 2.2-3.6 V, -40 to +85°C, 44-TSOP II. Active production, sourced to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tray","Technology":"SRAM - Asynchronous","Access Time":"10 ns","Memory Size":"4Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"44-TSOP (0.400\\\", 10.16mm Width)","Product Status":"Active","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"2.2V ~ 3.6V","Base Product Number":"CY7C1041","Memory Organization":"256K x 16","Operating Temperature":"-40°C~85°C(TA)","Supplier Device Package":"44-TSOP II","Write Cycle Time - Word, Page":"10ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$8.0600","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d156dbf032b3bbfff80996b4f799a2b8.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1041GN30-10ZSXI/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1041GN30-10ZSXI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1041GN30-10ZSXI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}