{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY7C1041GE-10VXI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY7C1041GE-10VXI","canonicalUrl":"https://icboms.com/infineon/CY7C1041GE-10VXI","factsUrl":"https://icboms.com/api/mcp/products/CY7C1041GE-10VXI","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CY7C1041GE-10VXI, asynchronous SRAM, 4Mbit (256K x 16), 10 ns access time, parallel interface, 4.5V to 5.5V supply, -40°C to 85°C, 44-SOJ surface mount package, Tube.","salesMarkdown":"In a 50 MHz bus environment, a 10 ns access leaves roughly 10 ns of setup margin after accounting for address propagation and output hold — enough for most FPGA or ASIC memory controllers without inserting wait states. If your controller expects a faster part (e.g., 8 ns), this part will not meet setup; if it expects 12 ns or slower, the 10 ns part provides headroom. ## 4Mbit density and 256K x 16 organization The 256K x 16 organization is a standard x16 word width, common in 16-bit microcontroller and DSP memory buses. The 4Mbit density suits applications needing moderate scratchpad or frame buffers — think Ethernet packet buffers, motor control lookup tables, or display line stores. The parallel interface is straightforward to route; no serial protocol overhead or configuration registers. ## Industrial temperature grade and 5V supply If your design has moved to 3.3V, consider the CY7C1041GE30-10ZSXI (3.0V version) instead, but note the package and footprint change.","metaTitle":"CY7C1041GE-10VXI Infineon SRAM, 4Mbit 10 ns 44-SOJ","metaDescription":"Infineon CY7C1041GE-10VXI asynchronous SRAM, 4Mbit (256K x 16), 10 ns access, 4.5V-5.5V, -40°C to 85°C, 44-SOJ. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Mfr":"Infineon Technologies","Series":"-","Package":"Tube","Technology":"SRAM - Asynchronous","Access Time":"10 ns","Memory Size":"4Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"44-BSOJ (0.400\\\", 10.16mm Width)","Product Status":"Active","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"4.5V ~ 5.5V","Base Product Number":"CY7C1041","Memory Organization":"256K x 16","Operating Temperature":"-40°C ~ 85°C (TA)","Supplier Device Package":"44-SOJ","Write Cycle Time - Word, Page":"10ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.4000","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/4b583d433046ca582816ac98334bd436.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CY7C1041GE-10VXI/alternatives.json"},"ai":{"faq":[{"question":"Is CY7C1041GE-10VXI obsolete or nearing end-of-life?","answer":"No."},{"question":"What is the access time of CY7C1041GE-10VXI?","answer":"The access time is 10 ns for both read and write cycles (word and page write cycle time also 10 ns)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY7C1041GE-10VXI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY7C1041GE-10VXI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}