{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY62167GE18-55BVXI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY62167GE18-55BVXI","canonicalUrl":"https://icboms.com/infineon/CY62167GE18-55BVXI","factsUrl":"https://icboms.com/api/mcp/products/CY62167GE18-55BVXI","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies MoBL® SRAM, 16Mbit, 55ns access time, 1.65V supply, parallel interface, 2M x 8 / 1M x 16 organization, 48VFBGA, tray.","salesMarkdown":"## 16 Mbit parallel SRAM for low-voltage bus designs The Infineon CY62167GE18-55BVXI is a 16 Mbit MoBL® SRAM with a 55 ns access time, organized as 2M x 8 or 1M x 16 for byte- or word-wide bus flexibility. Operating from a 1.65 V supply rail, this part fits battery-backed or 1.8 V logic systems where power is tight but you still need a direct parallel interface to an MCU or MPU address/data bus. The 55 ns access time means the SRAM can keep up with moderate-speed bus cycles — a 16-bit microcontroller running at 20 MHz with zero wait states on a 50 ns bus cycle will read data within one clock edge. Housed in a 48-ball VFBGA (Very Fine-pitch Ball Grid Array), the package requires a 0.5 mm ball pitch and a multi-layer PCB for fan-out — typical for a 4-layer board with microvias. Supplied in tray format, this is a production-quantity package suitable for pick-and-place assembly lines; the tray keeps the balls protected during handling. ## Active lifecycle and sourcing posture As an active part, it is sourced through authorized distribution channels; pricing and lead time are confirmed at RFQ against the BOM quantity.","metaTitle":"Infineon CY62167GE18-55BVXI 16Mbit SRAM, 55ns, 1.65V","metaDescription":"Infineon MoBL 16Mbit SRAM, 55ns access, 1.65V supply, parallel interface, 48VFBGA. Active production, industrial temp -40 to 85°C. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"series":"MoBL®","has_mpn":"CY62167","frame_size":"16Mbit","Access Time":"55 ns","memory_type":"Volatile","package_type":"Tray","Memory Format":"SRAM","mounting_type":"Surface Mount","interface_type":"Parallel","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"1.65","Memory Organization":"2M x 8, 1M x 16","Operating Temperature High":"-40°C to 85°C (TA)","Write Cycle Time - Word, Page":"55ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$29.47","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/636bbab566573971e0ffeaf34665c4a8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"How can I order the CY62167GE18-55BVXI or check availability?","answer":"The CY62167GE18-55BVXI is an active-production part."},{"question":"What does the 55 ns access time mean for my bus timing?","answer":"The 55 ns access time sets the maximum read-cycle period — a microcontroller with a 50 ns bus cycle can read data within one clock edge, but a 25 ns bus cycle would require wait states or a faster SRAM."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY62167GE18-55BVXI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY62167GE18-55BVXI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}