{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY62157EV30LL-55ZSXE","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY62157EV30LL-55ZSXE","canonicalUrl":"https://icboms.com/infineon/CY62157EV30LL-55ZSXE","factsUrl":"https://icboms.com/api/mcp/products/CY62157EV30LL-55ZSXE","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies MoBL® asynchronous SRAM, 8Mbit, 55ns access, 512K x 16, 2.2V–3.6V, -40°C to 125°C, 44-TSOP II, Tray.","salesMarkdown":"## 8 Mbit async SRAM, 55 ns — the timing ceiling The CY62157EV30LL-55ZSXE is an 8 Mbit asynchronous SRAM organized as 512K x 16, with a 55 ns access time. That 55 ns sets the bus read/write cycle floor — the processor must wait at least that long after asserting address before data is valid on the I/O pins. ## Industrial temp and the package that fits Write cycle time matches read: 55 ns word and page writes. Page-mode writes let you burst sequential addresses at the same 55 ns rate without de-asserting chip enable between writes, which improves throughput on a memory controller that supports page access. ## Active — no end-of-life pressure Infineon lists this part as Active (current production). ROHS3 compliant.","metaTitle":"CY62157EV30LL-55ZSXE Infineon 8Mbit SRAM, 55ns, 44-TSOP","metaDescription":"CY62157EV30LL-55ZSXE Infineon MoBL asynchronous SRAM, 8Mbit (512K x 16), 55ns access, 2.2-3.6V, -40°C to 125°C. Active production, ROHS3. Order online.","metaKeywords":null},"attributes":{"series":"MoBL®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Interface & Transceivers"],"specifications":{"Series":"MoBL®","Package":"Tray","Technology":"SRAM - Asynchronous","Access Time":"55 ns","Memory Size":"8Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"44-TSOP (0.400\\\", 10.16mm Width)","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"2.2V ~ 3.6V","Memory Organization":"512K x 16","Operating Temperature":"-40°C ~ 125°C (TA)","Supplier Device Package":"44-TSOP II","Write Cycle Time - Word, Page":"55ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$14.47","stockQuantity":25,"priceTiers":[{"qty":50,"price":"$10.02240","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/9245d10c033186c7420fb7b6cc544fb0.pdf","sourceUrl":null},"ai":{"faq":[{"question":"How does CY62157EV30LL-55ZSXE compare to CY7C1361C-100BZXE?","answer":"They are different densities and speeds — the CY7C1361C is a 9 Mbit (256K x 36) synchronous SRAM with 8.5 ns access, while this part is 8 Mbit (512K x 16) asynchronous at 55 ns. The CY7C1361C runs on a 3.135 V supply and comes in a different package — they are not pin-compatible or drop-in replacements."},{"question":"What compliance documentation does Infineon provide for CY62157EV30LL-55ZSXE?","answer":"The part is ROHS3 compliant. Standard Infineon documentation includes the datasheet, ROHS/REACH declarations, and material composition reports — available through the distributor or Infineon's support portal."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY62157EV30LL-55ZSXE","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY62157EV30LL-55ZSXE when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}