{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY62157DV30LL-55BVI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY62157DV30LL-55BVI","canonicalUrl":"https://icboms.com/infineon/CY62157DV30LL-55BVI","factsUrl":"https://icboms.com/api/mcp/products/CY62157DV30LL-55BVI","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies MoBL® asynchronous SRAM, CY62157DV30LL-55BVI, 8Mbit (512K x 16), 55 ns access, 2.2 V ~ 3.6 V, -40 to +85 °C, 48-VFBGA (6x8 mm), Bulk.","salesMarkdown":"## Memory density and access profile The CY62157DV30LL-55BVI is an 8 Mbit asynchronous SRAM organised as 512 K x 16 bits, part of Infineon's MoBL (More Battery Life) series optimised for low standby current in battery-backed or portable applications. With a 55 ns access time and matching 55 ns write cycle (word/page), this part fits 8-bit and 16-bit microcontroller buses that run at sub-18 MHz clock rates without inserting wait states — the bus master reads or writes in a single cycle. ## Package and board integration Housed in a 48-ball VFBGA (6 x 8 mm body), the 0.75 mm ball pitch demands tight via fan-out — a four-layer PCB with microvias or blind vias is the practical route for signal breakout. The parallel memory interface uses a 16-bit data bus plus address lines; routing must match the 55 ns timing budget, keeping trace length skew within a few inches between the controller and the SRAM. The part is marked RoHS non-compliant, so it falls outside the EU RoHS exemption scope. For RoHS-required BOMs, a lead-free variant from the same MoBL family should be cross-referenced at RFQ.","metaTitle":"CY62157DV30LL-55BVI Infineon SRAM, 8Mbit, 55ns, 48-VFBGA","metaDescription":"Infineon CY62157DV30LL-55BVI MoBL asynchronous SRAM, 8Mbit (512Kx16), 55ns access, 2.2V-3.6V, -40 to 85C, 48-VFBGA. Active production, RoHS non-compliant.","metaKeywords":null},"attributes":{"series":"MoBL®","packageCase":null,"mountingType":null,"rohsStatus":"RoHS non-compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Series":"MoBL®","Package":"Bulk","Technology":"SRAM - Asynchronous","Access Time":"55 ns","Memory Size":"8Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"48-VFBGA","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"2.2V ~ 3.6V","Memory Organization":"512K x 16","Operating Temperature":"-40°C ~ 85°C (TA)","Supplier Device Package":"48-VFBGA (6x8)","Write Cycle Time - Word, Page":"55ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.86","stockQuantity":0,"priceTiers":[{"qty":44,"price":"$6.86000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/0c2893a65ea6b0ca62cae32c578e4324.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the memory organisation and access time of CY62157DV30LL-55BVI?","answer":"The SRAM is organised as 512 K x 16 bits (8 Mbit total) with a 55 ns access time and a matching 55 ns write cycle time for word and page operations."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY62157DV30LL-55BVI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY62157DV30LL-55BVI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}