{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CY62147DV30LL-45BVXI","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"CY62147DV30LL-45BVXI","canonicalUrl":"https://icboms.com/infineon/CY62147DV30LL-45BVXI","factsUrl":"https://icboms.com/api/mcp/products/CY62147DV30LL-45BVXI","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies MoBL® asynchronous SRAM, CY62147DV30LL-45BVXI, 4Mbit (256K x 16), 45 ns access, parallel interface, 2.2-3.6 V, -40 to +85 °C, 48-VFBGA package.","salesMarkdown":"## Memory density and bus organization for the BOM The CY62147DV30LL-45BVXI: The 4-Mbit density organized as 256K x 16 bits means the part presents a 16-bit-wide data bus to the controller — a natural fit for 16-bit microcontrollers or as a word-wide scratchpad alongside a 32-bit processor where you want to minimise the chip count per memory bank. The parallel interface requires 18 address lines plus 16 data lines; the 45 ns access time and 45 ns write cycle set the bus timing budget for the memory controller's setup-and-hold window. ## Supply voltage and temperature grade — what they mean for fit Because the part is asynchronous, there is no clock tree to tune — the read and write cycles are strobe-controlled by the chip-enable and write-enable signals. This simplifies the PCB timing closure compared to a synchronous SRAM of the same density, especially when the host controller has no dedicated SDRAM controller on-chip. ## Package footprint and board integration The 48-ball VFBGA with a 6 mm x 8 mm body and 0.75 mm ball pitch is a fine-pitch BGA that routes out on two signal layers with a single via per ball if the escape pattern is optimised. ## Active production and compliance posture ROHS3 compliant means the plating and mould compound are free of the ten restricted substances including the four phthalates added in the 2015 EU amendment; no exemption declarations are needed for EU-market equipment. As an active MoBL® series member, the CY62147DV30LL-45BVXI is supported for new designs and ongoing production.","metaTitle":"CY62147DV30LL-45BVXI Infineon MoBL SRAM, 4Mbit, 45ns","metaDescription":"Infineon CY62147DV30LL-45BVXI MoBL asynchronous SRAM, 4Mbit (256K x 16), 45 ns access, 2.2-3.6 V, -40 to +85 °C, 48-VFBGA. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"MoBL®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Analog & Data Acquisition"],"specifications":{"Series":"MoBL®","Package":"Bulk","Technology":"SRAM - Asynchronous","Access Time":"45 ns","Memory Size":"4Mbit","Memory Type":"Volatile","Memory Format":"SRAM","Mounting Type":"Surface Mount","Package / Case":"48-VFBGA","lifecycle_stage":"eol_hot","Memory Interface":"Parallel","Voltage - Supply":"2.2V ~ 3.6V","Memory Organization":"256K x 16","Operating Temperature":"-40°C ~ 85°C (TA)","Supplier Device Package":"48-VFBGA (6x8)","Write Cycle Time - Word, Page":"45ns"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.9","stockQuantity":0,"priceTiers":[{"qty":158,"price":"$1.90000","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/CY62147DV30LL-45BVXI","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/CY62147DV30LL-45BVXI when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}