{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CSD87384M","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"CSD87384M","canonicalUrl":"https://icboms.com/texas-instruments/CSD87384M","factsUrl":"https://icboms.com/api/mcp/products/CSD87384M","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments NexFET series, CSD87384M, dual N-channel half-bridge MOSFET, 30V Vdss, 30A Id, 7.7mOhm Rds(on) max at 25A, 8V, 9.2nC gate charge at 4.5V, 5-LGA package, -55°C to 150°C junction temperature.","salesMarkdown":"## Half-bridge FET in a 5-LGA — what the 7.7 mOhm Rds(on) buys you The CSD87384M: The 7.7 mOhm max on-resistance at 25 A with an 8 V gate drive sets the conduction loss floor for a synchronous buck or motor-drive output stage. The logic-level gate threshold (1.9 V max at 250 µA) and 9.2 nC gate charge at 4.5 V mean a 3.3 V PWM controller or a low-voltage gate driver can switch the FET fully on without a separate 10 V rail. ## Junction temperature range and the 5-PTAB footprint Input capacitance is 1150 pF at 15 V Vds — moderate for a 30 A device. Sourced through independent distribution, the part is quoted to order against the BOM quantity.","metaTitle":"CSD87384M NexFET 30V 30A Half-Bridge MOSFET, 7.7mOhm Rds(on)","metaDescription":"Texas Instruments CSD87384M NexFET dual N-channel half-bridge MOSFET. 30V Vdss, 30A Id, 7.7mOhm Rds(on) at 8V. 5-LGA package, -55°C to 150°C. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"NexFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"NexFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"2 N-Channel (Half Bridge)","FET Feature":"Logic Level Gate","Power - Max":"8W","Mounting Type":"Surface Mount","Package / Case":"5-LGA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.9V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"7.7mOhm @ 25A, 8V","Supplier Device Package":"5-PTAB (5x3.5)","Gate Charge (Qg) (Max) @ Vgs":"9.2nC @ 4.5V","Drain to Source Voltage (Vdss)":"30V","Input Capacitance (Ciss) (Max) @ Vds":"1150pF @ 15V","Current - Continuous Drain (Id) @ 25°C":"30A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.83","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.83000","currency":"USD"},{"qty":10,"price":"$1.64600","currency":"USD"},{"qty":25,"price":"$1.55280","currency":"USD"},{"qty":100,"price":"$1.32310","currency":"USD"},{"qty":250,"price":"$1.24232","currency":"USD"},{"qty":500,"price":"$1.08704","currency":"USD"},{"qty":1000,"price":"$0.90068","currency":"USD"},{"qty":2500,"price":"$0.87900","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/54acc19982c052b669f0109f26e0b7e9.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can the CSD87384M handle 3.3 V logic-level gate drive?","answer":"Yes. The logic-level gate feature means the maximum gate threshold voltage is 1.9 V at 250 µA, and the 9.2 nC gate charge is specified at 4.5 V. A 3.3 V PWM output will fully enhance the FET, though the on-resistance will be slightly higher than the 7.7 mOhm figure at 8 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/CSD87384M","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/CSD87384M when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}