{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CSD23202W10","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"CSD23202W10","canonicalUrl":"https://icboms.com/texas-instruments/CSD23202W10","factsUrl":"https://icboms.com/api/mcp/products/CSD23202W10","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments NexFET P-Channel MOSFET, 12 V drain-to-source, 2.2 A continuous drain at 25 °C, 53 mOhm Rds(on) max at 500 mA and 4.5 V drive, 4-DSBGA 1x1 mm package, -55 to 150 °C junction temperature.","salesMarkdown":"## 53 mOhm on-resistance at 4.5 V drive The CSD23202W10: The 53 mOhm Rds(on) at 4.5 V gate drive is the number that sizes the conduction loss — at 500 mA load the voltage drop is under 27 mV, which keeps the dissipation below 14 mW in a typical load-switch application. The 1x1 mm 4-DSBGA package puts the die right at the board surface, so the thermal path is through the solder balls and the PCB copper, not a plastic overmold. ## Gate charge and switching speed Total gate charge is 3.8 nC at 4.5 V, with an input capacitance of 512 pF at 6 V drain bias. ## Package and mounting The 4-DSBGA (1x1 mm) package has four solder balls on a 0.5 mm pitch. No exposed pad, no centre thermal via — the die heat spreads through the BGA balls into the PCB pads. In a field-repair scenario this is not a hand-solder part; you need a hot-air station with a fine nozzle and a stencil for the solder paste. The package marking is minimal — confirm orientation by the pin-1 indicator (a dot or chamfer on the package corner) before placement. Moisture sensitivity level is not listed in the spec, but a 1x1 mm BGA typically runs MSL-1; still, bake at 125 °C for 8 hours if the reel has been open longer than the floor life.","metaTitle":"CSD23202W10 P-Channel MOSFET, 12V, 2.2A, 4-DSBGA","metaDescription":"Texas Instruments NexFET P-channel MOSFET, 12 Vdss, 2.2 A continuous, 53 mOhm Rds(on) at 4.5 V. 4-DSBGA 1x1 mm package. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"NexFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"NexFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"-6V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"4-UFBGA, DSBGA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"900mV @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"53mOhm @ 500mA, 4.5V","Power Dissipation (Max)":"1W (Ta)","Supplier Device Package":"4-DSBGA (1x1)","Gate Charge (Qg) (Max) @ Vgs":"3.8 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"12 V","Input Capacitance (Ciss) (Max) @ Vds":"512 pF @ 6 V","Drive Voltage (Max Rds On, Min Rds On)":"1.5V, 4.5V","Current - Continuous Drain (Id) @ 25°C":"2.2A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.41","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.41000","currency":"USD"},{"qty":10,"price":"$0.35400","currency":"USD"},{"qty":100,"price":"$0.26460","currency":"USD"},{"qty":500,"price":"$0.20790","currency":"USD"},{"qty":1000,"price":"$0.16065","currency":"USD"},{"qty":3000,"price":"$0.14647","currency":"USD"},{"qty":6000,"price":"$0.13703","currency":"USD"},{"qty":15000,"price":"$0.12757","currency":"USD"},{"qty":30000,"price":"$0.12096","currency":"USD"},{"qty":75000,"price":"$0.11970","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/1670cedecf3716e974cf3be738282fef.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of CSD23202W10?","answer":"Maximum on-resistance is 53 mOhm at 500 mA drain current with 4.5 V gate-to-source drive. At the minimum drive voltage of 1.5 V the Rds(on) is higher — the datasheet curve shows it roughly doubles below 2.5 V."},{"question":"Is CSD23202W10 compatible with 1.8 V logic?","answer":"The gate threshold voltage is 900 mV maximum at 250 µA drain current, so a 1.8 V logic output will turn the FET on. But the Rds(on) at 1.8 V drive is not specified — expect it to be significantly higher than the 53 mOhm at 4.5 V. For a load switch pulling 500 mA, the voltage drop at 1.8 V drive could be 100 mV or more, which may be acceptable depending on the load tolerance."},{"question":"Is CSD23202W10 equivalent to SI2301?","answer":"No direct pin-compatible equivalent. The SI2301 is a SOT-23 P-channel MOSFET; the CSD23202W10 is a 4-DSBGA with a completely different footprint and ball map. They share the same function (P-channel load switch) but the package difference means a board respin is required to swap one for the other."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/CSD23202W10","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/CSD23202W10 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}