{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CSD22205L","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"CSD22205L","canonicalUrl":"https://icboms.com/texas-instruments/CSD22205L","factsUrl":"https://icboms.com/api/mcp/products/CSD22205L","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments NexFET™ P-Channel MOSFET, CSD22205L, 8 V Drain-Source, 7.4 A Continuous Drain at 25°C, 9.9 mOhm Rds(on) at 4.5 V, 4-PICOSTAR Surface Mount, -55°C to 150°C Junction.","salesMarkdown":"## P-channel load switch for tight spaces The Texas Instruments CSD22205L is a P-channel NexFET power MOSFET in a 4-PICOSTAR package — a 4-pin XFLGA land-grid array that sits nearly flush on the board. ## 9.9 mOhm Rds(on) — what it buys you Maximum on-resistance is 9.9 mOhm at 4.5 V gate drive with 1 A drain current. That low Rds(on) keeps conduction losses under 100 mW at 3 A — critical in a package that can only shed 600 mW at ambient. The drive voltage window is 1.5 V minimum for the highest Rds(on) tier, 4.5 V for the lowest; a 3.3 V logic-level gate drive lands between those points, so expect slightly higher than the 9.9 mOhm floor if the gate driver rail is 3.3 V. ## 8.5 nC gate charge — switching speed matters Total gate charge at 4.5 V is 8.5 nC, and input capacitance at 4 V drain-source is 1390 pF. A modest 1 A gate driver can turn this FET on in under 10 ns; the real switching loss is in the output capacitance discharge, not the gate drive. For a 500 kHz to 1 MHz switching regulator, the gate-drive power penalty is small — roughly 40 µW per MHz of switching frequency. ## Thermal reality in a 4-PICOSTAR package The 4-PICOSTAR land-grid array measures roughly 1 mm × 1 mm — no exposed pad, no thermal slug. Maximum power dissipation is 600 mW at 25°C ambient, derated above that. The 7.4 A current rating is achievable only with aggressive PCB copper spreading and low duty-cycle pulsed operation; at DC the thermal limit kicks in well below that figure. Junction temperature range is -55°C to 150°C, so the silicon itself can survive hot environments, but the package limits how much heat it can move. ## Active, ROHS3, and what that means for BOM planning Product status is Active with ROHS3 compliance. The NexFET series is an ongoing TI portfolio — second-source risk is low.","metaTitle":"CSD22205L P-Channel NexFET MOSFET, 8V 7.4A, 9.9mOhm Rds(on)","metaDescription":"Texas Instruments CSD22205L P-Channel NexFET MOSFET. 8V Vds, 7.4A Id, 9.9mOhm Rds(on) at 4.5V. 4-PICOSTAR package. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"NexFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"NexFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"-6V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"4-XFLGA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.05V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"9.9mOhm @ 1A, 4.5V","Power Dissipation (Max)":"600mW (Ta)","Supplier Device Package":"4-PICOSTAR","Gate Charge (Qg) (Max) @ Vgs":"8.5 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"8 V","Input Capacitance (Ciss) (Max) @ Vds":"1390 pF @ 4 V","Drive Voltage (Max Rds On, Min Rds On)":"1.5V, 4.5V","Current - Continuous Drain (Id) @ 25°C":"7.4A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.54","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.54000","currency":"USD"},{"qty":10,"price":"$0.46100","currency":"USD"},{"qty":100,"price":"$0.34400","currency":"USD"},{"qty":500,"price":"$0.27028","currency":"USD"},{"qty":1000,"price":"$0.20884","currency":"USD"},{"qty":3000,"price":"$0.19042","currency":"USD"},{"qty":6000,"price":"$0.17813","currency":"USD"},{"qty":15000,"price":"$0.16585","currency":"USD"},{"qty":30000,"price":"$0.15725","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/501f5988b7c6e59841020b8c13c7f97f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of CSD22205L at 4.5 V?","answer":"Maximum Rds(on) is 9.9 mOhm at 4.5 V gate drive with 1 A drain current. At 3.3 V drive the on-resistance will be higher — the 1.5 V drive specification gives the worst-case upper bound."},{"question":"Is CSD22205L RoHS compliant?","answer":"Yes, it is ROHS3 compliant per TI's lifecycle record."},{"question":"What package does CSD22205L come in?","answer":"It is supplied in a 4-PICOSTAR package, which is a 4-pin XFLGA land-grid array for surface-mount assembly."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/CSD22205L","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/CSD22205L when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}