{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CSD22204WT","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"CSD22204WT","canonicalUrl":"https://icboms.com/texas-instruments/CSD22204WT","factsUrl":"https://icboms.com/api/mcp/products/CSD22204WT","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments NexFET P-Channel MOSFET, 8 V Vdss, 5 A continuous drain, 9.9 mOhm Rds(on) at 4.5 V, 24.6 nC gate charge, 9-DSBGA package, -55 to 150 °C.","salesMarkdown":"## Gate charge and switching speed The CSD22204WT: Total gate charge Qg is 24.6 nC at 4.5 V. Input capacitance Ciss is 1130 pF at 4 V drain-source. ## Thermal headroom for tight layouts Junction temperature range extends from -55 °C to 150 °C, covering both military cold-soak and under-hood hot spots. Maximum power dissipation is 1.7 W at 25 °C ambient on a standard PCB — derate above 25 °C per the datasheet's thermal impedance curves. The DSBGA's exposed backside pad (if connected to a copper plane) improves heat spreading, but the 1.7 W ceiling limits the continuous current to 5 A only with adequate board copper. ## Active lifecycle — no obsolescence pressure The part is ROHS3 compliant. For new designs, the active lifecycle means no forced redesign from obsolescence, though the DSBGA footprint locks the board into a fine-pitch assembly process.","metaTitle":"Texas Instruments CSD22204WT P-Channel MOSFET, 8 V, 5 A","metaDescription":"P-Channel NexFET MOSFET, 8 V Vdss, 5 A continuous drain, 9.9 mOhm Rds(on) at 4.5 V. Active production, -55 to 150 °C.","metaKeywords":null},"attributes":{"series":"NexFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"NexFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"-6V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"9-UFBGA, DSBGA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"950mV @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"9.9mOhm @ 2A, 4.5V","Power Dissipation (Max)":"1.7W (Ta)","Supplier Device Package":"9-DSBGA","Gate Charge (Qg) (Max) @ Vgs":"24.6 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"8 V","Input Capacitance (Ciss) (Max) @ Vds":"1130 pF @ 4 V","Drive Voltage (Max Rds On, Min Rds On)":"2.5V, 4.5V","Current - Continuous Drain (Id) @ 25°C":"5A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.23","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.23000","currency":"USD"},{"qty":10,"price":"$1.10000","currency":"USD"},{"qty":100,"price":"$0.85730","currency":"USD"},{"qty":250,"price":"$0.80140","currency":"USD"},{"qty":500,"price":"$0.70822","currency":"USD"},{"qty":1250,"price":"$0.55913","currency":"USD"},{"qty":2500,"price":"$0.52185","currency":"USD"},{"qty":6250,"price":"$0.49576","currency":"USD"},{"qty":12500,"price":"$0.47712","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/55c97c265655d07912d58d64898706aa.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the typical application for CSD22204WT MOSFET?","answer":"The 8 V Vdss and 5 A continuous rating suit low-voltage load switching, battery protection in handheld devices, and power-rail OR-ing in portable electronics. The P-channel polarity allows high-side switching with a simple gate drive referenced to the source rail."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/CSD22204WT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/CSD22204WT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}