{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CSD18537NKCS","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"CSD18537NKCS","canonicalUrl":"https://icboms.com/texas-instruments/CSD18537NKCS","factsUrl":"https://icboms.com/api/mcp/products/CSD18537NKCS","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments CSD18537NKCS, N-Channel MOSFET, 60 V Vdss, 50 A continuous drain, 14 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 60 V, 50 A N-channel MOSFET in TO-220-3 It is built on TI's NexFET™ technology, delivering a typical Rds(on) of 14 mOhm at 10 V gate drive (25 A). ## Gate drive and switching performance Total gate charge is 18 nC at 10 V. Input capacitance is 1480 pF at 30 V drain-source. Maximum threshold voltage is 3.5 V at 250 µA. It is ROHS3 compliant, with no restricted substances above the threshold.","metaTitle":"CSD18537NKCS MOSFET, N-Channel 60V 50A TO-220-3","metaDescription":"CSD18537NKCS N-Channel MOSFET, 60V Vdss, 50A Id, 14mOhm Rds(on) at 10V. TO-220-3 through-hole. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"14mOhm @ 25A, 10V","Power Dissipation (Max)":"94W (Tc)","Supplier Device Package":"TO-220-3","Gate Charge (Qg) (Max) @ Vgs":"18 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"1480 pF @ 30 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"50A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.35","priceTiers":[{"qty":1,"price":"$1.35000","currency":"USD"},{"qty":10,"price":"$1.20800","currency":"USD"},{"qty":100,"price":"$0.94180","currency":"USD"},{"qty":500,"price":"$0.77804","currency":"USD"},{"qty":650,"price":"$0.77805","currency":"USD"},{"qty":1000,"price":"$0.61425","currency":"USD"},{"qty":2000,"price":"$0.57330","currency":"USD"},{"qty":5000,"price":"$0.54464","currency":"USD"},{"qty":10000,"price":"$0.52416","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/263b0cfdd4ddd3d2a9ba6f5c6ad6cf1e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/CSD18537NKCS/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of CSD18537NKCS at 10V gate drive?","answer":"The maximum Rds(on) is 14 mOhm at 25 A drain current with a 10 V gate-source voltage. This is the spec to use for worst-case conduction-loss calculations in a power stage."},{"question":"Is CSD18537NKCS a direct replacement for IRFZ44N?","answer":"Both are 60 V N-channel MOSFETs in TO-220-3, but the CSD18537NKCS has a lower Rds(on) (14 mOhm vs. typically 17.5 mOhm for IRFZ44N) and a lower gate charge (18 nC vs. roughly 60 nC). Pin-compatible in most layouts, but verify the gate-drive voltage and switching frequency requirements — the lower gate charge allows faster switching. Always check the PCB footprint and thermal pad compatibility."},{"question":"Does CSD18537NKCS require a heatsink?","answer":"At 50 A continuous drain current and 94 W maximum power dissipation, a heatsink is required for any sustained high-current operation. The TO-220-3 package relies on the metal tab for heat transfer to a heatsink or PCB copper area. For pulsed or low-duty-cycle loads, the thermal mass of the package may suffice without a heatsink, but always calculate junction temperature rise from the Rds(on) and duty cycle."},{"question":"Can CSD18537NKCS be used with 3.3V gate drive?","answer":"No — the maximum threshold voltage is 3.5 V at 250 µA, and the drive voltage range for rated Rds(on) is 6 V to 10 V. A 3.3 V gate signal will not fully enhance the MOSFET, resulting in much higher on-resistance and potential thermal runaway. Use a 5 V or 10 V gate-drive rail for this part."},{"question":"Is CSD18537NKCS RoHS compliant?","answer":"Yes, it is ROHS3 compliant, meeting the EU RoHS directive for restricted substances."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/CSD18537NKCS","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/CSD18537NKCS when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}