{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CSD18503KCS","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"CSD18503KCS","canonicalUrl":"https://icboms.com/texas-instruments/CSD18503KCS","factsUrl":"https://icboms.com/api/mcp/products/CSD18503KCS","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments NexFET N-Channel Power MOSFET, CSD18503KCS, 40 V Vdss, 100 A Id, 4.5 mOhm Rds(on) at 10 V, TO-220-3 package, -55 to 150 °C junction temperature.","salesMarkdown":"## 40 V, 100 A, 4.5 mOhm — the power path numbers The 36 nC total gate charge at 10 V keeps switching losses moderate for a 100 A device; a standard gate driver with 1 A peak output can drive it into the 50–100 kHz range without excessive driver heating. ## Gate drive voltage — 10 V for rated Rds(on), 4.5 V for light loads The datasheet specifies Rds(on) at Vgs = 10 V, which is the standard drive level for this class of NexFET. The drive voltage range listed is 4.5 V to 10 V, meaning the FET will turn on with a 5 V logic-level gate signal, but the on-resistance will be higher than the 4.5 mOhm headline figure — expect roughly double at 4.5 V based on the typical Vgs vs Rds(on) curve for this generation of NexFET trench technology. For applications where the gate drive is limited to 5 V, the 2.3 V maximum threshold at 250 µA ensures the device is fully enhanced, but the higher Rds(on) must be factored into the thermal budget. ## Through-hole TO-220-3 — board and thermal interface The TO-220-3 package is a standard through-hole power package with the tab as the drain terminal. The mounting hole accommodates an M3 screw and a TO-220 heatsink clip or spring. The junction-to-case thermal path is the primary heat extraction route — the 188 W power dissipation rating assumes the case is held at 25 °C with an appropriate heatsink. For motor-drive or power-supply layouts, the tab is at drain potential, so the heatsink must be electrically isolated or the system must tolerate the tab voltage. ## Sourcing and lifecycle The NexFET series is a mature TI trench MOSFET family with multiple Rds(on) and voltage variants sharing the same TO-220 footprint, so a second-source or alternate density option is straightforward if supply tightens.","metaTitle":"CSD18503KCS NexFET N-Channel MOSFET, 40V 100A TO-220-3","metaDescription":"TI CSD18503KCS NexFET N-Channel MOSFET: 40V Vdss, 100A Id, 4.5mOhm Rds(on) at 10V. TO-220-3. Active production.","metaKeywords":null},"attributes":{"series":"NexFET™","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":[],"specifications":{"Series":"NexFET™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.3V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"4.5mOhm @ 75A, 10V","Power Dissipation (Max)":"188W (Tc)","Supplier Device Package":"TO-220-3","Gate Charge (Qg) (Max) @ Vgs":"36 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"3150 pF @ 20 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.87","stockQuantity":0,"priceTiers":[{"qty":336,"price":"$0.89000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/a9a82c4de27a623a85ea8b4c9f8a7c73.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Does CSD18503KCS require a 10 V gate drive?","answer":"The CSD18503KCS is specified with Rds(on) measured at Vgs = 10 V, and 10 V drive delivers the full 4.5 mOhm on-resistance. For minimum conduction loss, use a 10 V gate supply."},{"question":"Can I use CSD18503KCS for motor control?","answer":"Yes. The 40 V Vdss rating covers 12 V and 24 V motor bus voltages with margin for inductive flyback. The 100 A continuous drain current and 4.5 mOhm Rds(on) keep conduction losses low in the H-bridge. The TO-220-3 package bolts to a heatsink for the thermal load. For higher-voltage motor drives (48 V or above), a 60 V or 80 V FET would be needed."},{"question":"Is CSD18503KCS compatible with 5 V gate drive?","answer":"The CSD18503KCS has a drive voltage range of 4.5 V to 10 V, so a 5 V gate signal will turn the FET on. The maximum threshold voltage is 2.3 V at 250 µA, so the 5 V drive provides adequate gate overdrive for full enhancement. However, the on-resistance at 5 V drive will be higher than the 4.5 mOhm specified at 10 V — expect approximately 8–10 mOhm. For applications where 5 V is the only gate supply available, verify the thermal budget with the higher Rds(on)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/CSD18503KCS","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/CSD18503KCS when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}