{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CSD17577Q5A","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"CSD17577Q5A","canonicalUrl":"https://icboms.com/texas-instruments/CSD17577Q5A","factsUrl":"https://icboms.com/api/mcp/products/CSD17577Q5A","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments NexFET N-Channel MOSFET, CSD17577Q5A, 30V Vdss, 60A Id, 4.2mOhm Rds(on) at 10V, 35nC Qg, 8-VSONP (5x6) package, -55 to 150°C.","salesMarkdown":"## 4.2 mOhm Rds(on) at 10 V — the conduction-loss floor The headline spec is the 4.2 mOhm maximum on-resistance at Vgs = 10 V and 18 A — this sets the conduction loss floor for a synchronous rectifier or load switch. The 35 nC typical gate charge at 10 V keeps the gate-drive current moderate for switching frequencies up to a few hundred kilohertz. ## 60 A drain current — what the thermal budget actually limits The 60 A continuous rating at 25 °C is a package-limited number on a single-layer test board. The real constraint is the 3 W maximum power dissipation at 25 °C ambient (Ta) versus 53 W at the case (Tc). In a real layout with the 8-VSONP exposed pad soldered to a copper plane, the effective current is derated by the junction-to-ambient thermal resistance and the ambient temperature. ## Active production, ROHS3, and the 8-VSONP footprint The 8-VSONP (5x6 mm) package has a large exposed thermal pad on the bottom; the PCB layout must include a matching copper land and at least nine thermal vias to pull heat into the inner layers.","metaTitle":"CSD17577Q5A NexFET N-Ch MOSFET, 30V 60A, 4.2mOhm Rds(on)","metaDescription":"Texas Instruments CSD17577Q5A NexFET N-channel MOSFET, 30V Vdss, 60A continuous drain, 4.2mOhm max Rds(on) at 10V. 8-VSONP package, -55 to 150°C.","metaKeywords":null},"attributes":{"series":"NexFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"NexFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.8V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"4.2mOhm @ 18A, 10V","Power Dissipation (Max)":"3W (Ta), 53W (Tc)","Supplier Device Package":"8-VSONP (5x6)","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"2310 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"60A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.84","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.84000","currency":"USD"},{"qty":10,"price":"$0.73800","currency":"USD"},{"qty":100,"price":"$0.56580","currency":"USD"},{"qty":500,"price":"$0.44730","currency":"USD"},{"qty":1000,"price":"$0.35784","currency":"USD"},{"qty":2500,"price":"$0.32429","currency":"USD"},{"qty":5000,"price":"$0.30193","currency":"USD"},{"qty":12500,"price":"$0.29074","currency":"USD"},{"qty":25000,"price":"$0.28329","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f1aa611091758a8fc3dbf96b8168ea75.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of CSD17577Q5A?","answer":"The maximum Rds(on) is 4.2 mOhm at Vgs = 10 V and Id = 18 A. The drive voltage range for achieving this on-resistance is 4.5 V to 10 V, with the lowest Rds(on) at 10 V."},{"question":"What is the maximum drain current of CSD17577Q5A?","answer":"The continuous drain current is rated at 60 A at 25 °C (Ta). This is a package-limited rating; the practical current in a design is limited by the 3 W (Ta) / 53 W (Tc) power dissipation and the junction temperature staying below 150°C."},{"question":"What is the gate charge of CSD17577Q5A?","answer":"The maximum total gate charge (Qg) at Vgs = 10 V is 35 nC. This is a moderate gate charge for a 60 A FET, keeping the gate-driver current requirement around 3.5 mA per 100 kHz of switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/CSD17577Q5A","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/CSD17577Q5A when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}