{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CSD16406Q3","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"CSD16406Q3","canonicalUrl":"https://icboms.com/texas-instruments/CSD16406Q3","factsUrl":"https://icboms.com/api/mcp/products/CSD16406Q3","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments NexFET N-Channel MOSFET, 25V Vds, 19A (Ta) / 60A (Tc), 5.3mOhm Rds(on) at 10V, 8.1nC gate charge, 8-VSON-CLIP surface-mount package, -55 to 150°C junction temperature range.","salesMarkdown":"The CSD16406Q3 is a Texas Instruments NexFET N-channel MOSFET rated for a 25 V drain-source voltage and a continuous drain current of 19 A at the ambient temperature case (Ta), or 60 A when the case temperature (Tc) is held at 25 °C. The 8-VSON-CLIP package (3.3x3.3 mm) uses a copper clip construction that lowers package resistance and inductance compared to conventional wire-bonded SO-8 devices, which matters for high-frequency switching loops. ## Rds(on), gate charge, and driving from logic-level voltages Maximum on-resistance is 5.3 mOhm at a 20 A drain current with 10 V gate drive — the 4.5 V and 10 V drive voltage levels listed for minimum and maximum Rds(on) mean this MOSFET can be turned on hard with either standard logic-level (5 V) or full 10 V gate drive. The 8.1 nC gate charge at 4.5 V is low enough that a microcontroller GPIO with a series resistor can switch it at moderate frequencies (tens of kHz) without a dedicated gate driver, provided the GPIO source current is adequate to charge the 1100 pF input capacitance within the desired switching time. ## Thermal limits and the 19 A vs 60 A current rating The 2.7 W maximum power dissipation at ambient (Ta) is the limiting factor for a board-level design without heatsinking: at 19 A continuous, the conduction loss alone (I² × Rds(on)) already exceeds 1.9 W at 25 °C junction, leaving little margin. The 60 A case-temperature rating assumes the MOSFET is mounted on a heatsink or PCB copper area that holds the case at 25 °C — a realistic scenario only with a large thermal pad and forced airflow. Derate above 25 °C following the typical Rds(on) temperature coefficient (roughly 0.4 %/°C). ## Active production status and sourcing It is ROHS3 compliant.","metaTitle":"CSD16406Q3 NexFET N-Ch 25V 19A/60A MOSFET, 5.3mOhm Rds(on)","metaDescription":"CSD16406Q3 N-channel NexFET MOSFET, 25V Vds, 19A (Ta) / 60A (Tc), 5.3mOhm Rds(on) at 10V. 8-VSON-CLIP package, -55 to 150°C. Available to order.","metaKeywords":null},"attributes":{"series":"NexFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"NexFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"+16V, -12V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"5.3mOhm @ 20A, 10V","Power Dissipation (Max)":"2.7W (Ta)","Supplier Device Package":"8-VSON-CLIP (3.3x3.3)","Gate Charge (Qg) (Max) @ Vgs":"8.1 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"25 V","Input Capacitance (Ciss) (Max) @ Vds":"1100 pF @ 12.5 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"19A (Ta), 60A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.17","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.17000","currency":"USD"},{"qty":10,"price":"$1.05000","currency":"USD"},{"qty":100,"price":"$0.81870","currency":"USD"},{"qty":500,"price":"$0.67632","currency":"USD"},{"qty":1000,"price":"$0.53394","currency":"USD"},{"qty":2500,"price":"$0.49834","currency":"USD"},{"qty":5000,"price":"$0.47343","currency":"USD"},{"qty":12500,"price":"$0.45563","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/918717d45f5a5b3fd71b3eef400866e4.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can the CSD16406Q3 be driven directly by a 3.3 V microcontroller?","answer":"Yes, the gate threshold voltage (Vgs(th)) is 2.2 V maximum at 250 µA, so a 3.3 V logic output will turn the MOSFET on. However, the Rds(on) is specified with 4.5 V and 10 V drive — at 3.3 V the on-resistance will be higher than the 5.3 mOhm maximum listed at 10 V. Expect approximately 7–8 mOhm at 3.3 V gate drive based on the typical transfer curve for this NexFET family. The 8.1 nC gate charge at 4.5 V is manageable for a GPIO with a 10–20 Ω series resistor for moderate switching speeds (up to ~50 kHz)."},{"question":"What are the key differences between CSD16406Q3 and CSD16408Q5?","answer":"Both are 25 V N-channel NexFETs in the 8-VSON-CLIP package. The CSD16408Q5 has a lower Rds(on) (typically around 2.4 mOhm vs 5.3 mOhm max for the CSD16406Q3) and a higher continuous drain current rating. The trade-off is a slightly larger gate charge. If your design needs lower conduction loss at higher current, the CSD16408Q5 is the better choice; if you need the lower gate charge for logic-level drive at moderate currents, the CSD16406Q3 fits."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/CSD16406Q3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/CSD16406Q3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}