{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CSD13306W","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"CSD13306W","canonicalUrl":"https://icboms.com/texas-instruments/CSD13306W","factsUrl":"https://icboms.com/api/mcp/products/CSD13306W","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments NexFET™ N-Channel MOSFET, 12 V drain-source, 3.5 A continuous drain, 10.2 mOhm Rds(on) at 4.5 V, 6-DSBGA (1x1.5) package, -55°C to 150°C junction temperature.","salesMarkdown":"## 12 V NexFET in a 1x1.5 mm DSBGA — where it fits CSD13306W is an N-Channel MOSFET with 12 V drain-source and 3.5 A continuous drain. Its 10.2 mOhm max on-resistance at 4.5 V gate drive suits low-voltage load switching, battery protection, and DC-DC converter synchronous rectification. ## Rds(on) and gate drive — what 10.2 mOhm at 4.5 V means for your BOM The 10.2 mOhm Rds(on) is specified at 4.5 V gate drive. The drive voltage range includes 2.5 V minimum for reduced Rds(on) and 4.5 V for full enhancement. Gate charge is 11.2 nC at 4.5 V. Input capacitance is 1370 pF at 6 V drain-source. ## Package and thermal — the DSBGA reality There is no exposed pad — heat spreads through the board copper. The 1.9 W power dissipation at 25 °C ambient assumes a standard JEDEC 2s2p board; real-world thermal performance depends on the number of vias and copper area under the part. For continuous loads above 2 A, a 4-layer board with thermal vias is recommended. ## Temperature range and operating environment The 150°C ceiling allows operation in hot enclosures or near power stages without derating the junction, though the package's thermal resistance to ambient (not explicitly given here) will limit practical current at high ambient temperatures. ## Sourcing and lifecycle posture It is RoHS3 compliant.","metaTitle":"Texas Instruments CSD13306W NexFET N-Channel MOSFET","metaDescription":"NexFET N-Channel MOSFET, 12V Vdss, 3.5A continuous drain, 10.2mOhm Rds(on) at 4.5V.","metaKeywords":null},"attributes":{"series":"NexFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"NexFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±10V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"6-UFBGA, DSBGA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.3V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"10.2mOhm @ 1.5A, 4.5V","Power Dissipation (Max)":"1.9W (Ta)","Supplier Device Package":"6-DSBGA (1x1.5)","Gate Charge (Qg) (Max) @ Vgs":"11.2 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"12 V","Input Capacitance (Ciss) (Max) @ Vds":"1370 pF @ 6 V","Drive Voltage (Max Rds On, Min Rds On)":"2.5V, 4.5V","Current - Continuous Drain (Id) @ 25°C":"3.5A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.54","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.54000","currency":"USD"},{"qty":10,"price":"$0.46100","currency":"USD"},{"qty":100,"price":"$0.34400","currency":"USD"},{"qty":500,"price":"$0.27028","currency":"USD"},{"qty":1000,"price":"$0.20884","currency":"USD"},{"qty":3000,"price":"$0.19042","currency":"USD"},{"qty":6000,"price":"$0.17813","currency":"USD"},{"qty":15000,"price":"$0.16585","currency":"USD"},{"qty":30000,"price":"$0.15725","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8f7e03d1af3f57292c42eeffc2b2b3ec.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of CSD13306W?","answer":"The maximum on-resistance is 10.2 mOhm at a drain current of 1.5 A and gate drive of 4.5 V."},{"question":"Can I use CSD13306W with a 3.3V gate drive?","answer":"Yes, the drive voltage range includes 2.5 V for reduced Rds(on) and 4.5 V for full enhancement. At 3.3 V gate drive the FET will turn on, but the on-resistance will be higher than the 10.2 mOhm figure — expect roughly double the conduction loss compared to 4.5 V drive."},{"question":"What is the footprint of CSD13306W?","answer":"The package is 6-DSBGA measuring 1x1.5 mm, a wafer-level chip-scale footprint with six solder balls on the bottom. PCB layout must account for the fine-pitch BGA pattern and thermal vias for heat spreading."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/CSD13306W","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/CSD13306W when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}