{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"CSD13302W","brand":"Texas Instruments","brandSlug":"texas-instruments","productSlug":"CSD13302W","canonicalUrl":"https://icboms.com/texas-instruments/CSD13302W","factsUrl":"https://icboms.com/api/mcp/products/CSD13302W","rawCanonicalId":null},"summary":{"shortDescription":"Texas Instruments NexFET N-Channel MOSFET, 12V Vdss, 1.6A continuous drain, 17.1 mOhm Rds(on) at 4.5V gate drive, 7.8 nC gate charge, 4-DSBGA (1x1 mm) package, -55°C to 150°C junction temperature.","salesMarkdown":"## 12 V N-channel NexFET in a 1x1 mm BGA — what it switches and where The CSD13302W: The 17.1 mOhm maximum on-resistance at 4.5 V gate drive sets the conduction loss floor for battery-powered rail switching or load-switch applications. The 4-DSBGA package measures 1x1 mm — roughly the footprint of a 0402 resistor. That shrinks the board area to almost nothing, but it also means the copper pad on the PCB is the primary heat path. The 1.8 W power dissipation rating at 25°C ambient assumes a standard footprint; in a tight layout with limited copper, the real thermal limit will be lower. ## Package and mounting Gate charge is 7.8 nC at 4.5 V. The 862 pF input capacitance at 6 V Vds gives a rough handle on the Miller plateau. The 1.3 V maximum gate threshold at 250 µA means the FET is fully enhanced well below 2.5 V gate drive. ROHS3 compliant, so it clears the current environmental compliance gate for all regions. If dual-sourcing is critical, a larger-package alternative in the same voltage/current class (e.g. SOT-23) would require a board spin. ## Temperature range and the 1x1 mm package — what the repair bench sees The catch is the package: 4-DSBGA with no visible leads. On the repair bench, that means the scorch mark is the only clue the FET failed — you cannot probe the gate pad without a microprobe station. Rework requires hot air and a steady hand; the 1x1 mm body lifts easily if the board is not preheated.","metaTitle":"CSD13302W NexFET N-Ch MOSFET, 12V 1.6A, 17.1 mOhm, 4-DSBGA","metaDescription":"Texas Instruments CSD13302W NexFET N-Channel MOSFET, 12V Vdss, 1.6A continuous drain, 17.1 mOhm Rds(on) at 4.5V. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"NexFET™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"NexFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±10V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"4-UFBGA, DSBGA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.3V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"17.1mOhm @ 1A, 4.5V","Power Dissipation (Max)":"1.8W (Ta)","Supplier Device Package":"4-DSBGA (1x1)","Gate Charge (Qg) (Max) @ Vgs":"7.8 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"12 V","Input Capacitance (Ciss) (Max) @ Vds":"862 pF @ 6 V","Drive Voltage (Max Rds On, Min Rds On)":"2.5V, 4.5V","Current - Continuous Drain (Id) @ 25°C":"1.6A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.49","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.49000","currency":"USD"},{"qty":10,"price":"$0.40000","currency":"USD"},{"qty":100,"price":"$0.27220","currency":"USD"},{"qty":500,"price":"$0.20412","currency":"USD"},{"qty":1000,"price":"$0.15309","currency":"USD"},{"qty":3000,"price":"$0.14033","currency":"USD"},{"qty":6000,"price":"$0.13183","currency":"USD"},{"qty":15000,"price":"$0.12332","currency":"USD"},{"qty":30000,"price":"$0.11312","currency":"USD"},{"qty":75000,"price":"$0.10886","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/76527b6722451f91bef797ec528f633f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What voltage does the CSD13302W switch?","answer":"The drain-to-source voltage rating is 12 V maximum. It is designed for low-voltage rails — 5 V, 3.3 V, or 1.8 V load switching, battery protection, and point-of-load DC-DC converters."},{"question":"Can CSD13302W be used for high-frequency switching?","answer":"Yes — the 7.8 nC gate charge at 4.5 V and 862 pF input capacitance support switching frequencies into the low MHz range. The actual frequency ceiling depends on the gate driver's peak current and the PCB layout parasitics; for a 1 MHz buck converter the FET itself is not the bottleneck."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/texas-instruments/CSD13302W","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/texas-instruments/CSD13302W when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}