{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BUZ32HXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BUZ32HXKSA1","canonicalUrl":"https://icboms.com/infineon/BUZ32HXKSA1","factsUrl":"https://icboms.com/api/mcp/products/BUZ32HXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SIPMOS N-Channel Power MOSFET, BUZ32HXKSA1, 200 V Vdss, 9.5 A continuous drain, 400 mOhm Rds(on) at 6 A, 10 V, TO-220-3 through-hole package, -55°C to 150°C operating junction temperature.","salesMarkdown":"## 200 V N-channel MOSFET in TO-220-3 — active and available The TO-220-3 through-hole package (PG-TO220-3) suits conventional heatsink mounting in power stages where surface-mount parts would struggle with thermal dissipation. The 400 mOhm Rds(on) at Vgs=10 V and Id=6 A sets the conduction loss at 2.4 W at that operating point. With a 75 W maximum power dissipation at the case, the part can handle pulsed currents well above the 9.5 A continuous rating, provided the junction stays within the -55 °C to 150 °C range. The ±20 V maximum gate rating gives headroom for a 12 V or 15 V gate drive rail, but the 10 V drive voltage for minimum Rds(on) is the target for the gate driver design.","metaTitle":"Infineon BUZ32HXKSA1 N-Channel Power MOSFET, 200 V, 9.5 A","metaDescription":"Infineon BUZ32HXKSA1 SIPMOS N-channel MOSFET, 200 V Vdss, 9.5 A continuous drain, 400 mOhm Rds(on). Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"SIPMOS®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SIPMOS®","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1mA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"400mOhm @ 6A, 10V","Power Dissipation (Max)":"75W (Tc)","Supplier Device Package":"PG-TO220-3","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"530 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.55","stockQuantity":0,"priceTiers":[{"qty":549,"price":"$0.55000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8f7828755347e0deed3232a0101673b5.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the equivalent or replacement for BUZ32HXKSA1?","answer":"No official direct replacement is listed. The IPD50R950CEAUMA1 is a 500 V CoolMOS N-channel MOSFET in a surface-mount DPAK package — it operates at a higher voltage but has a higher 950 mOhm Rds(on) and different footprint. It is not a pin-compatible drop-in for the BUZ32HXKSA1."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BUZ32HXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BUZ32HXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}