{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BUZ30AH3045A","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BUZ30AH3045A","canonicalUrl":"https://icboms.com/infineon/BUZ30AH3045A","factsUrl":"https://icboms.com/api/mcp/products/BUZ30AH3045A","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SIPMOS® N-Channel MOSFET, 200 V drain-source, 21 A continuous drain at 25°C, 130 mOhm Rds(on) at 10 V gate drive, TO-263-3 (D²Pak) surface-mount package, -55°C to 150°C junction temperature.","salesMarkdown":"The Infineon BUZ30AH3045A is a 200 V N-channel power MOSFET from the SIPMOS® family, built on a metal-oxide semiconductor process. ## Package and mounting The 130 mOhm Rds(on) at 10 V gate drive sets the conduction loss at a given load. At 13.5 A, that's about 24 W of dissipation — the 125 W package power limit gives thermal headroom, but the junction-to-case thermal path through the TO-263 tab needs a decent copper area and a via stitch to the inner plane. The 1900 pF input capacitance at 25 V drain-source is moderate; the gate driver sees a manageable charge, so switching losses at 50–100 kHz are reasonable without a heroic gate-drive IC. The 4 V gate threshold at 1 mA means a 10 V drive is the safe choice to achieve the rated Rds(on); a 5 V logic-level gate signal won't fully enhance the channel. The official series is SIPMOS®, Infineon's own high-voltage MOSFET platform, so the datasheet and process support are current. ## Surface-mount TO-263 — board-level fit The TO-263-3 (D²Pak) surface-mount package suits automated assembly lines.","metaTitle":"Infineon BUZ30AH3045A SIPMOS N-Channel MOSFET, 200 V, 21 A","metaDescription":"Infineon BUZ30AH3045A SIPMOS N-Channel MOSFET, 200 Vdss, 21 A continuous drain, 130 mOhm Rds(on) at 10 V. Active production.","metaKeywords":null},"attributes":{"series":"SIPMOS®","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"SIPMOS®","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1mA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"130mOhm @ 13.5A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"PG-TO263-3-2","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"1900 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"21A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.68","stockQuantity":0,"priceTiers":[{"qty":442,"price":"$0.68000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7e5a03b8e09977980f2b7dc3c19f6730.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BUZ30AH3045A","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BUZ30AH3045A when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}