{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BUZ111S","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BUZ111S","canonicalUrl":"https://icboms.com/infineon/BUZ111S","factsUrl":"https://icboms.com/api/mcp/products/BUZ111S","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SIPMOS N-Channel Power MOSFET, BUZ111S, 55 V Vdss, 80 A continuous drain, 8 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55 to 175 °C operating temperature.","salesMarkdown":"## What the 8 mOhm Rds(on) means on a 55 V, 80 A MOSFET The Infineon BUZ111S is an N-channel SIPMOS power MOSFET in a TO-220-3 through-hole package. Vdss is 55 V. Continuous drain current is 80 A at 25 °C case temperature; the 300 W power dissipation limit (Tc) is the real thermal constraint. ## Gate drive and switching — what the numbers tell you Gate charge Qg is 185 nC at 10 V, and input capacitance Ciss is 4500 pF at 25 V drain-source. That is a moderate gate charge for a TO-220 device — a standard gate driver IC can switch it at tens of kHz without excessive drive current. The 4 V gate threshold (max at 240 µA) means it turns on cleanly with logic-level drive, but the 10 V drive voltage is needed to hit the minimum Rds(on). Operating temperature range is -55 °C to 175 °C junction — that is the full military-grade span, so this part is at home in engine bays, outdoor telecom cabinets, or downhole tools where the ambient is brutal. The TO-220-3 package (PG-TO220-3-1) is a standard through-hole footprint; it bolts to a heatsink with a single screw and the tab is the drain. ## Lifecycle and compliance — active, but watch the RoHS flag One catch: it is listed as RoHS non-compliant. If your assembly line or end-market requires RoHS exemption-free compliance, you will need to qualify an alternative or accept the lead-bearing finish. The TO-220-3 package and through-hole mounting make it a straightforward hand-solder or wave-solder part in a service or low-volume production environment.","metaTitle":"Infineon BUZ111S N-Channel Power MOSFET, 55 V, 80 A","metaDescription":"Infineon BUZ111S SIPMOS N-channel MOSFET, 55 V Vdss, 80 A continuous drain, 8 mOhm Rds(on) at 10 V. TO-220-3 package, active production.","metaKeywords":null},"attributes":{"series":"SIPMOS®","packageCase":null,"mountingType":null,"rohsStatus":"RoHS non-compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SIPMOS®","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 240µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"8mOhm @ 80A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"185 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"4500 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.79","stockQuantity":0,"priceTiers":[{"qty":382,"price":"$0.79000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ea45d401f81ed0a5268c7a7f88cfecca.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BUZ111S","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BUZ111S when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}