{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BUK7E5R2-100E,127","brand":"NXP Semiconductors","brandSlug":"nxp","productSlug":"BUK7E5R2-100E127","canonicalUrl":"https://icboms.com/nxp/BUK7E5R2-100E127","factsUrl":"https://icboms.com/api/mcp/products/BUK7E5R2-100E%2C127","rawCanonicalId":null},"summary":{"shortDescription":"Nexperia TrenchMOS BUK7E5R2-100E,127, N-Channel MOSFET, 100 V Vdss, 120 A Id, 5.2 mOhm Rds(on) at 10 V, ±20 V Vgs, 180 nC Qg, I2PAK through-hole, AEC-Q101 automotive grade.","salesMarkdown":"It comes in a through-hole I2PAK package and is qualified to AEC-Q101, making it suited for automotive power-train, motor-drive, and high-current switching applications where the junction temperature can reach 175°C. ## 5.2 mOhm on-resistance — conduction loss in high-current paths At 120 A the I²R loss is about 75 W — the 349 W power-dissipation rating at case temperature gives enough thermal headroom when the part is properly heatsunk. The 10 V drive voltage is the recommended gate level to achieve the lowest on-resistance; the ±20 V Vgs absolute maximum allows some margin for gate-drive overshoot. ## Gate charge and input capacitance — drive requirements The gate charge is 180 nC at 10 V, and the input capacitance is 11810 pF at 25 V drain-source. These numbers set the gate-driver current needed for a given switching frequency. A 10 A gate driver, for example, can charge the gate in about 18 ns — fast enough for hard-switching converters in the 50–100 kHz range. Slower gate drive reduces EMI but increases switching loss; the 180 nC figure lets you calculate the trade-off for your switching speed. ## Automotive-grade qualification and temperature range AEC-Q101 qualification means this part has passed the automotive stress tests for reliability — temperature cycling, high-temperature reverse bias, and humidity.","metaTitle":"Nexperia BUK7E5R2-100E,127 N-Channel MOSFET, 100 V, 120 A","metaDescription":"Nexperia BUK7E5R2-100E,127 TrenchMOS N-channel MOSFET, 100 V Vdss, 120 A Id, 5.2 mOhm Rds(on) at 10 V, AEC-Q101 qualified, I2PAK.","metaKeywords":null},"attributes":{"series":"TrenchMOS™","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Grade":"Automotive","Series":"TrenchMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Qualification":"AEC-Q101","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"5.2mOhm @ 25A, 10V","Power Dissipation (Max)":"349W (Tc)","Supplier Device Package":"I2PAK","Gate Charge (Qg) (Max) @ Vgs":"180 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"11810 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.11","stockQuantity":0,"priceTiers":[{"qty":249,"price":"$1.21000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b88b2fc3d081d02dce0848e24c33f8a4.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is BUK7E5R2-100E,127 automotive qualified?","answer":"Yes, the BUK7E5R2-100E,127 carries AEC-Q101 qualification, which is the automotive stress-test standard for discrete semiconductors."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/nxp/BUK7E5R2-100E127","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/nxp/BUK7E5R2-100E127 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}