{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BUK7660-100A,118","brand":"NXP Semiconductors","brandSlug":"nxp","productSlug":"BUK7660-100A118","canonicalUrl":"https://icboms.com/nxp/BUK7660-100A118","factsUrl":"https://icboms.com/api/mcp/products/BUK7660-100A%2C118","rawCanonicalId":null},"summary":{"shortDescription":"Nexperia BUK7660-100A,118, Automotive AEC-Q101 TrenchMOS N-Channel MOSFET, 100 V Vdss, 26 A Id, 60 mOhm Rds(on) at 10 V, D2PAK (TO-263) surface-mount package.","salesMarkdown":"## 100 V, 26 A N-channel TrenchMOS for automotive and industrial power switching The device is housed in a D2PAK (TO-263-3) surface-mount package with a tab for thermal dissipation. ## 60 mOhm on-resistance — what it means for conduction loss At 26 A full load, conduction loss (I²R) reaches about 40 W, which the 106 W power dissipation rating can handle with adequate heatsinking. The 10 V drive voltage is typical for gate drivers in automotive and industrial systems; the part also specifies a 4 V threshold at 1 mA, so logic-level drive at 5 V may not fully enhance the channel — confirm gate drive margin against the threshold and transfer curves. ## Temperature range and AEC-Q101 qualification Operating junction temperature spans -55°C to 175°C, covering under-hood automotive, engine bay, and high-ambient industrial environments. The AEC-Q101 qualification means the part has passed stress tests for reliability in automotive-grade assemblies, including HTRB, H3TRB, and temperature cycling. The 175°C maximum junction allows headroom for derating in high-power switching applications. ## Package and footprint: D2PAK (TO-263-3) The D2PAK (TO-263-3) surface-mount package has two leads plus a tab for drain connection and thermal transfer. Input capacitance is 1377 pF at 25 V drain-source, which is moderate — gate drive current should be sized to keep switching losses acceptable at the target frequency.","metaTitle":"BUK7660-100A,118 Nexperia N-Channel MOSFET, 100V, 26A, D2PAK","metaDescription":"Nexperia BUK7660-100A,118 Automotive AEC-Q101 N-Channel TrenchMOS MOSFET. 100V Vdss, 26A Id, 60mOhm Rds(on) at 10V. D2PAK package. Active lifecycle.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101, TrenchMOS™","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"Automotive, AEC-Q101, TrenchMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"60mOhm @ 15A, 10V","Power Dissipation (Max)":"106W (Tc)","Supplier Device Package":"D2PAK","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"1377 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"26A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.55","stockQuantity":0,"priceTiers":[{"qty":503,"price":"$0.60000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/97e6995b70f96b03cbcc953af5aee5c2.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/nxp/BUK7660-100A118","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/nxp/BUK7660-100A118 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}