{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BUK7516-55A,127","brand":"NXP Semiconductors","brandSlug":"nxp","productSlug":"BUK7516-55A127","canonicalUrl":"https://icboms.com/nxp/BUK7516-55A127","factsUrl":"https://icboms.com/api/mcp/products/BUK7516-55A%2C127","rawCanonicalId":null},"summary":{"shortDescription":"NXP TrenchMOS™ N-Channel MOSFET, BUK7516-55A,127, 55V Vdss, 65.7A Id, 16mOhm Rds(on) at 10V, TO-220AB, -55°C to 175°C.","salesMarkdown":"The NXP BUK7516-55A,127 is a 55 V, 65.7 A N-channel TrenchMOS power MOSFET in a through-hole TO-220AB package. It is designed for medium-voltage switching applications such as DC/DC converters, motor drives, and automotive power distribution where the 55 V drain-source rating provides margin on 12 V and 24 V rails. ## Gate drive voltage and Rds(on) — the 10 V gate-drive requirement The 16 mOhm Rds(on) is specified at Vgs = 10 V, which is the drive voltage for minimum on-resistance. The gate threshold voltage is 4 V maximum at 1 mA drain current, so a 5 V logic-level gate drive will turn the device on but with significantly higher Rds(on) — roughly double the headline figure. Designs using 3.3 V MCU outputs need a gate driver or level shifter to reach 10 V for full rated performance. Derate the 65.7 A continuous current rating above 25°C case temperature per the datasheet's thermal curve. ## Input capacitance and switching speed The input capacitance (Ciss) is 2245 pF typical at Vds = 25 V. This is moderate for a 65 A rated MOSFET — the gate driver must supply enough peak current to charge and discharge this capacitance for fast switching. A 1 A gate driver will handle switching frequencies up to several hundred kHz; for higher frequencies, budget gate drive current accordingly. ## Active lifecycle and compliance It is ROHS3 compliant.","metaTitle":"BUK7516-55A,127 N-Channel TrenchMOS MOSFET, 55V, 65.7A","metaDescription":"NXP BUK7516-55A,127 TrenchMOS N-channel MOSFET, 55V Vdss, 65.7A Id, 16mOhm Rds(on) at 10V. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"TrenchMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"TrenchMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 1mA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"16mOhm @ 25A, 10V","Power Dissipation (Max)":"138W (Tc)","Supplier Device Package":"TO-220AB","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"2245 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"65.7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.37","stockQuantity":0,"priceTiers":[{"qty":802,"price":"$0.37000","currency":"USD"}]},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/hrxtgngyjv/PHGLS22226-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/nxp/BUK7516-55A127","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/nxp/BUK7516-55A127 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}