{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSZ900N20NS3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSZ900N20NS3GATMA1","canonicalUrl":"https://icboms.com/infineon/BSZ900N20NS3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSZ900N20NS3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ BSZ900N20NS3GATMA1, N-Channel MOSFET, 200 V Vdss, 15.2 A Id, 90 mOhm Rds(on) at 10 V, 11.6 nC Qg, -55 to 150 °C, PG-TSDSON-8 package.","salesMarkdown":"## Switching loss and gate-drive budget Total gate charge is 11.6 nC at 10 V gate drive. For a 200 kHz switching frequency, the average gate-drive current is 2.3 mA — well within the capability of a standard gate-driver IC. Input capacitance is 920 pF at 100 V drain bias, which keeps the Miller plateau short and limits cross-conduction losses in hard-switched topologies. ## Thermal limits and package footprint Maximum power dissipation is 62.5 W at case temperature Tc=25 °C. The PG-TSDSON-8 package (8-PowerTDFN) has a large bottom-side thermal pad; the PCB copper area under the pad directly sets the junction-to-ambient thermal resistance. For continuous 15.2 A operation, a 2 oz copper pour of at least 2 in² is recommended to keep the junction below 125 °C. It is ROHS3 compliant.","metaTitle":"Infineon BSZ900N20NS3GATMA1 N-Channel MOSFET, 200 V, 15.2 A","metaDescription":"Infineon OptiMOS™ N-Channel MOSFET, 200 V Vdss, 15.2 A continuous drain, 90 mOhm Rds(on) at 10 V. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 30µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"90mOhm @ 7.6A, 10V","Power Dissipation (Max)":"62.5W (Tc)","Supplier Device Package":"PG-TSDSON-8","Gate Charge (Qg) (Max) @ Vgs":"11.6 nC @ 10 V","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"920 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"15.2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.98","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.98000","currency":"USD"},{"qty":10,"price":"$1.64300","currency":"USD"},{"qty":100,"price":"$1.30740","currency":"USD"},{"qty":500,"price":"$1.10622","currency":"USD"},{"qty":1000,"price":"$0.93861","currency":"USD"},{"qty":2000,"price":"$0.89169","currency":"USD"},{"qty":5000,"price":"$0.85816","currency":"USD"},{"qty":10000,"price":"$0.82975","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/89009ae4d4f36b1fbb5ede269c28a2ab.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of BSZ900N20NS3G?","answer":"Maximum on-resistance is 90 mOhm at 7.6 A drain current with 10 V gate drive. This is the spec to use for worst-case conduction-loss calculations at the rated current."},{"question":"Is BSZ900N20NS3GATMA1 RoHS compliant?","answer":"Yes, the part is ROHS3 compliant per the lifecycle record."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSZ900N20NS3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSZ900N20NS3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}