{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSZ340N08NS3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSZ340N08NS3GATMA1","canonicalUrl":"https://icboms.com/infineon/BSZ340N08NS3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSZ340N08NS3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS BSZ340N08NS3GATMA1, N-Channel MOSFET, 80 V Vdss, 34 mOhm Rds(on) at 10 V, 23 A continuous drain, PG-TSDSON-8 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 80 V N-channel in a 3.3 mm × 3.3 mm footprint The BSZ340N08NS3GATMA1 is an Infineon OptiMOS N-channel MOSFET rated for 80 V drain-source with a continuous drain current of 23 A at the case (6 A at ambient). The PG-TSDSON-8 package — 3.3 mm × 3.3 mm with an exposed pad — puts a 23 A switch on a footprint smaller than an SOT-23, which is the whole point of the OptiMOS trench topology. Rds(on) is 34 mOhm maximum at 12 A with 10 V gate drive. That 34 mOhm at 23 A comes to 18 W conduction loss at the die — the 32 W package limit at the case leaves about 14 W headroom for switching loss, so this part is specced for hard-switched DC-DC and motor-drive outputs where the duty cycle keeps the average current below 12 A. ## Gate charge and switching speed Total gate charge at 10 V is 9.1 nC, and input capacitance is 630 pF at 40 V drain. For a 500 kHz buck converter, the gate drive current needed is about 4.5 mA average — easily handled by a standard 1 A gate driver. The low Qg relative to the 23 A rating means the switching losses don't eat the conduction budget at moderate frequencies. The threshold voltage window (3.5 V max at 12 µA) means 5 V logic from a 3.3 V MCU won't fully enhance the channel — the datasheet calls for 6 V or 10 V drive to hit the rated Rds(on). A 5 V gate driver or a 12 V rail is the practical choice for this part. ## Temperature range and thermal handling Junction temperature range is -55°C to 150°C, covering automotive under-hood and industrial motor-drive environments. The 2.1 W dissipation at ambient is a board-limited figure — the real thermal path is through the exposed pad to the PCB copper. The 32 W at the case assumes a thermal interface to a heatsink or a multi-layer board with thermal vias.","metaTitle":"BSZ340N08NS3GATMA1 OptiMOS N-Ch 80V 23A MOSFET, PG-TSDSON-8","metaDescription":"Infineon BSZ340N08NS3GATMA1 N-channel MOSFET, 80V Vdss, 34mOhm Rds(on) at 10V, 23A continuous drain. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 12µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"34mOhm @ 12A, 10V","Power Dissipation (Max)":"2.1W (Ta), 32W (Tc)","Supplier Device Package":"PG-TSDSON-8","Gate Charge (Qg) (Max) @ Vgs":"9.1 nC @ 10 V","Drain to Source Voltage (Vdss)":"80 V","Input Capacitance (Ciss) (Max) @ Vds":"630 pF @ 40 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"6A (Ta), 23A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.79","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.79000","currency":"USD"},{"qty":10,"price":"$0.68300","currency":"USD"},{"qty":100,"price":"$0.47310","currency":"USD"},{"qty":500,"price":"$0.39534","currency":"USD"},{"qty":1000,"price":"$0.33645","currency":"USD"},{"qty":2000,"price":"$0.29965","currency":"USD"},{"qty":5000,"price":"$0.28388","currency":"USD"},{"qty":10000,"price":"$0.26285","currency":"USD"},{"qty":25000,"price":"$0.26025","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/1a47b0f9c61b6804ddb1d0920b989bd4.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the equivalent part for BSZ340N08NS3GATMA1?","answer":"The IPD50R950CEAUMA1 is a CoolMOS device with a 500 V rating and 950 mOhm Rds(on) — it is not a functional replacement for the 80 V, 34 mOhm OptiMOS BSZ340N08NS3GATMA1. For a drop-in replacement, confirm the package (PG-TSDSON-8) and parametric match against the original BOM spec."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSZ340N08NS3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSZ340N08NS3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}