{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSZ068N06NSATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSZ068N06NSATMA1","canonicalUrl":"https://icboms.com/infineon/BSZ068N06NSATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSZ068N06NSATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ N-Channel MOSFET, BSZ068N06NSATMA1, 60 Vdss, 40 A Id, 6.8 mOhm Rds(on) @ 20 A, 10 V, PG-TSDSON-8-FL package, -55 to 150 °C.","salesMarkdown":"The part is symmetrical in the reel but the pad orientation is obvious once you see the chamfered corner. No hot-air station required for rework if you have a soldering iron with a fine chisel tip and some flux; just pre-tin the pad and reflow with a hot plate or a small oven. The package marking is legible under a loupe, so you can verify polarity before soldering. ## Lifecycle and compliance — no end-of-life watch needed","metaTitle":"Infineon BSZ068N06NSATMA1 N-Channel MOSFET, 60V 40A","metaDescription":"Infineon BSZ068N06NSATMA1 OptiMOS N-channel MOSFET, 60V drain-source, 40A continuous drain, 6.8 mOhm Rds(on) at 20A. Active, RoHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.3V @ 20µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"6.8mOhm @ 20A, 10V","Power Dissipation (Max)":"2.1W (Ta), 46W (Tc)","Supplier Device Package":"PG-TSDSON-8-FL","Gate Charge (Qg) (Max) @ Vgs":"21 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"1500 pF @ 30 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"40A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.21","priceTiers":[{"qty":1,"price":"$1.21000","currency":"USD"},{"qty":10,"price":"$0.99000","currency":"USD"},{"qty":100,"price":"$0.76970","currency":"USD"},{"qty":500,"price":"$0.65242","currency":"USD"},{"qty":1000,"price":"$0.53147","currency":"USD"},{"qty":2000,"price":"$0.50031","currency":"USD"},{"qty":5000,"price":"$0.47649","currency":"USD"},{"qty":10000,"price":"$0.45450","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/a82257390b54b5599d77058146d17a6a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSZ068N06NSATMA1/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of BSZ068N06NSATMA1?","answer":"The maximum on-resistance is 6.8 mOhm at a drain current of 20 A with a 10 V gate drive. That is the figure to use for conduction-loss calculations at full load."},{"question":"What is the gate charge (Qg) of BSZ068N06NSATMA1?","answer":"The maximum gate charge is 21 nC at a gate voltage of 10 V. This moderate Qg means a standard gate-driver IC can switch the MOSFET without excessive switching losses."},{"question":"Is BSZ068N06NSATMA1 RoHS compliant?","answer":"Yes — it is ROHS3 compliant, meeting the EU Restriction of Hazardous Substances directive for lead and other restricted materials."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSZ068N06NSATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSZ068N06NSATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}