{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSZ018NE2LSIATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSZ018NE2LSIATMA1","canonicalUrl":"https://icboms.com/infineon/BSZ018NE2LSIATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSZ018NE2LSIATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ BSZ018NE2LSIATMA1 N-Channel MOSFET, 25 V Vdss, 40 A continuous drain (Tc), 1.8 mOhm max Rds(on) at 10 V, PG-TSDSON-8-FL package, -55°C to 150°C junction temperature.","salesMarkdown":"The Infineon BSZ018NE2LSIATMA1 is an N-channel MOSFET from the OptiMOS™ series, rated for a drain-to-source voltage of 25 V and a continuous drain current of 40 A at the case temperature (Tc), with a maximum on-resistance of 1.8 mOhm at a 20 A drain current and 10 V gate drive. It comes in a PG-TSDSON-8-FL surface-mount package, a 8-lead PowerTDFN footprint that handles up to 69 W of power dissipation at the case. It is ROHS3 compliant.","metaTitle":"Infineon BSZ018NE2LSIATMA1 N-Channel MOSFET, 25 V, 1.8 mOhm","metaDescription":"Infineon OptiMOS™ BSZ018NE2LSIATMA1 N-Channel MOSFET, 25 V, 40 A continuous drain, 1.8 mOhm Rds(on) at 10 V. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.8mOhm @ 20A, 10V","Power Dissipation (Max)":"2.1W (Ta), 69W (Tc)","Supplier Device Package":"PG-TSDSON-8-FL","Gate Charge (Qg) (Max) @ Vgs":"36 nC @ 10 V","Drain to Source Voltage (Vdss)":"25 V","Input Capacitance (Ciss) (Max) @ Vds":"2500 pF @ 12 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"22A (Ta), 40A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0","priceTiers":[{"qty":1,"price":"$2.00000","currency":"USD"},{"qty":10,"price":"$1.66000","currency":"USD"},{"qty":100,"price":"$1.32150","currency":"USD"},{"qty":500,"price":"$1.11822","currency":"USD"},{"qty":1000,"price":"$0.94879","currency":"USD"},{"qty":2000,"price":"$0.90136","currency":"USD"},{"qty":5000,"price":"$0.86747","currency":"USD"},{"qty":10000,"price":"$0.83875","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSZ018NE2LSIATMA1/alternatives.json"},"ai":{"faq":[{"question":"Is the BSZ018NE2LSIATMA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant per the Infineon listing."},{"question":"What is the footprint of the BSZ018NE2LSIATMA1?","answer":"The package is PG-TSDSON-8-FL, an 8-lead PowerTDFN. The exact footprint dimensions are in the Infineon datasheet."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSZ018NE2LSIATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSZ018NE2LSIATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}