{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSS806NH6327XTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSS806NH6327XTSA1","canonicalUrl":"https://icboms.com/infineon/BSS806NH6327XTSA1","factsUrl":"https://icboms.com/api/mcp/products/BSS806NH6327XTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ N-Channel MOSFET, 20 V drain-source, 2.3 A continuous drain current, 57 mOhm max on-resistance at 2.5 V gate drive, PG-SOT23 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 20 V logic-level switch in a SOT-23 footprint The BSS806NH6327XTSA1 is an N-Channel MOSFET with 57 mOhm maximum on-resistance at 2.5 V gate drive. The PG-SOT23 package (SOT-23-3 footprint) keeps the board area under 3 mm². ## Gate charge and switching losses Total gate charge is 1.7 nC at 2.5 V gate drive. The 529 pF input capacitance at 10 V drain-source gives a rough handle on turn-on delay. ## Temperature range and environment Maximum power dissipation is 500 mW at 25°C ambient — derate above that per the thermal resistance of the SOT-23 pad. The ROHS3 compliance and lead-free construction match current assembly restrictions for most markets.","metaTitle":"BSS806NH6327XTSA1 N-Channel MOSFET, 20V 2.3A, 57mOhm at 2.5V","metaDescription":"Infineon BSS806NH6327XTSA1 OptiMOS N-Channel MOSFET, 20V drain-source, 2.3A continuous, 57mOhm Rds(on) at 2.5V gate drive. Active, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±8V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"750mV @ 11µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"57mOhm @ 2.3A, 2.5V","Power Dissipation (Max)":"500mW (Ta)","Supplier Device Package":"PG-SOT23","Gate Charge (Qg) (Max) @ Vgs":"1.7 nC @ 2.5 V","Drain to Source Voltage (Vdss)":"20 V","Input Capacitance (Ciss) (Max) @ Vds":"529 pF @ 10 V","Drive Voltage (Max Rds On, Min Rds On)":"1.8V, 2.5V","Current - Continuous Drain (Id) @ 25°C":"2.3A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.53","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.53000","currency":"USD"},{"qty":10,"price":"$0.40000","currency":"USD"},{"qty":100,"price":"$0.24900","currency":"USD"},{"qty":500,"price":"$0.17036","currency":"USD"},{"qty":1000,"price":"$0.13104","currency":"USD"},{"qty":3000,"price":"$0.11794","currency":"USD"},{"qty":6000,"price":"$0.11138","currency":"USD"},{"qty":15000,"price":"$0.10156","currency":"USD"},{"qty":30000,"price":"$0.09555","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ab6b1011bb698abb61e10fabb2c7ebe3.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of BSS806NH6327XTSA1 at 2.5V?","answer":"Maximum on-resistance is 57 mOhm at 2.3 A drain current with 2.5 V gate drive. The drive voltage range for achieving rated Rds(on) is 1.8 V to 2.5 V."},{"question":"Is BSS806NH6327XTSA1 lead-free and RoHS compliant?","answer":"Yes, it is ROHS3 compliant. The construction is lead-free, consistent with current RoHS exemptions for semiconductor devices."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSS806NH6327XTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSS806NH6327XTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}