{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSS806NEH6327XTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSS806NEH6327XTSA1","canonicalUrl":"https://icboms.com/infineon/BSS806NEH6327XTSA1","factsUrl":"https://icboms.com/api/mcp/products/BSS806NEH6327XTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® series BSS806NEH6327XTSA1, N-Channel MOSFET, 20 V Vdss, 2.3 A continuous drain, 57 mOhm Rds(on) at 2.5 V, PG-SOT23 package, AEC-Q101 qualified, -55 to 150 °C operating range.","salesMarkdown":"## 57 mOhm at 2.5 V gate drive — what it buys the low-voltage rail The headline spec is the 57 mOhm maximum on-resistance at 2.5 V gate drive — this means the part turns on hard from a 3.3 V or 1.8 V logic rail without needing a separate gate driver boost stage. It is built for low-voltage load switching, DC-DC converter synchronous rectification, and power distribution in automotive body electronics and industrial control modules. ## AEC-Q101 and the 150 °C junction ceiling Qualified to AEC-Q101, the part is screened for automotive-grade reliability — thermal cycling, high-temperature reverse bias, and humidity stress. The 500 mW power dissipation at 25 °C ambient in the SOT-23 package limits continuous current in still air; the 2.3 A rating assumes adequate PCB copper for heat spreading. ## Gate charge and drive compatibility Total gate charge is 1.7 nC at 2.5 V, with a maximum gate threshold of 750 mV at 11 µA. The low Qg allows direct PWM drive from a microcontroller GPIO at switching frequencies up to several hundred kilohertz without significant gate-drive losses. Input capacitance is 529 pF at 10 V drain bias, which keeps the Miller plateau short and reduces cross-conduction risk during fast edge transitions. ## Package and footprint for the board Supplied in the PG-SOT23 package (TO-236-3 / SC-59 / SOT-23-3 footprint), surface-mount. The 0.50 mm pitch and low profile suit dense PCB layouts in automotive ECU and portable equipment designs. ## Sourcing and lifecycle posture No official second-source or direct replacement is listed in the manufacturer cross-reference — the part is sole-sourced to Infineon's HEXFET® line.","metaTitle":"BSS806NEH6327XTSA1 N-Channel MOSFET, 20 V, 2.3 A, SOT-23","metaDescription":"Infineon BSS806NEH6327XTSA1 N-channel MOSFET, 20 V Vdss, 2.3 A continuous drain, 57 mOhm Rds(on) at 2.5 V. AEC-Q101 qualified, -55 to 150 °C.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101, HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"Automotive, AEC-Q101, HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±8V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"750mV @ 11µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"57mOhm @ 2.3A, 2.5V","Power Dissipation (Max)":"500mW (Ta)","Supplier Device Package":"PG-SOT23","Gate Charge (Qg) (Max) @ Vgs":"1.7 nC @ 2.5 V","Drain to Source Voltage (Vdss)":"20 V","Input Capacitance (Ciss) (Max) @ Vds":"529 pF @ 10 V","Drive Voltage (Max Rds On, Min Rds On)":"1.8V, 2.5V","Current - Continuous Drain (Id) @ 25°C":"2.3A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.44","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.52000","currency":"USD"},{"qty":10,"price":"$0.39000","currency":"USD"},{"qty":100,"price":"$0.24300","currency":"USD"},{"qty":500,"price":"$0.16630","currency":"USD"},{"qty":1000,"price":"$0.12792","currency":"USD"},{"qty":3000,"price":"$0.11513","currency":"USD"},{"qty":6000,"price":"$0.10873","currency":"USD"},{"qty":15000,"price":"$0.09914","currency":"USD"},{"qty":30000,"price":"$0.09328","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/26d3c158f93d199e98dc3d4651c2b512.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the BSS806NEH6327XTSA1's gate drive voltage requirement?","answer":"The on-resistance is specified at 2.5 V gate drive, with a minimum drive voltage of 1.8 V for achieving the rated Rds(on). The maximum gate-source voltage is ±8 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSS806NEH6327XTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSS806NEH6327XTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}