{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSS169H6327XTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSS169H6327XTSA1","canonicalUrl":"https://icboms.com/infineon/BSS169H6327XTSA1","factsUrl":"https://icboms.com/api/mcp/products/BSS169H6327XTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SIPMOS® BSS169H6327XTSA1, N-Channel Depletion Mode MOSFET, 100V Vdss, 170mA Id, 6 Ohm Rds(on) @ 10V, SOT-23-3, -55°C to 150°C.","salesMarkdown":"The Infineon BSS169H6327XTSA1 is an N-channel depletion-mode MOSFET from the SIPMOS® family, packaged in a standard SOT-23-3. Unlike enhancement-mode FETs that are normally off, this device conducts at zero gate-source voltage and requires a negative Vgs to turn off — a characteristic that makes it the natural choice for current-source biasing, start-up circuits in switched-mode power supplies, and cascode stages where a normally-on pass element is needed. Rated for 100 V drain-source and 170 mA continuous drain current. The 6 Ohm on-resistance at 10 V drive is typical for a depletion-mode device at this current level. ## Drive voltage and gate characteristics The drive voltage range spans 0 V to 10 V, with the maximum Rds(on) specified at 10 V. Gate threshold is 1.8 V maximum at 50 µA drain current. Maximum gate-source voltage is ±20 V. Gate charge is 2.8 nC at 7 V, and input capacitance is 68 pF at 25 V drain-source — both low enough for switching frequencies into the hundreds of kilohertz without excessive drive losses. The small gate charge also means a simple RC drive circuit is often sufficient. ## Power handling and thermal considerations Maximum power dissipation is 360 mW at 25°C ambient. The 170 mA continuous current rating is tied to the same thermal limit.","metaTitle":"BSS169H6327XTSA1 SIPMOS N-Ch Depletion MOSFET","metaDescription":"Infineon BSS169H6327XTSA1 N-channel depletion-mode MOSFET, 100V Vdss, 170mA Id, 6 Ohm Rds(on), SOT-23-3. Active, ROHS3. Available to order.","metaKeywords":null},"attributes":{"series":"SIPMOS®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SIPMOS®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"Depletion Mode","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.8V @ 50µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"6Ohm @ 170mA, 10V","Power Dissipation (Max)":"360mW (Ta)","Supplier Device Package":"PG-SOT23","Gate Charge (Qg) (Max) @ Vgs":"2.8 nC @ 7 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"68 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"0V, 10V","Current - Continuous Drain (Id) @ 25°C":"170mA (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.45","priceTiers":[{"qty":1,"price":"$0.53000","currency":"USD"},{"qty":10,"price":"$0.45600","currency":"USD"},{"qty":100,"price":"$0.34070","currency":"USD"},{"qty":500,"price":"$0.26770","currency":"USD"},{"qty":1000,"price":"$0.20686","currency":"USD"},{"qty":3000,"price":"$0.18860","currency":"USD"},{"qty":6000,"price":"$0.17745","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e71d7a311a6bf4452cc8a6b7b203bc51.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSS169H6327XTSA1/alternatives.json"},"ai":{"faq":[{"question":"Is BSS169H6327XTSA1 obsolete or still active?","answer":"BSS169H6327XTSA1 carries an Active product status. No end-of-life or last-time-buy has been announced for this Infineon SIPMOS® part."},{"question":"What is the replacement or equivalent for BSS169H6327XTSA1?","answer":"No direct pin-compatible replacement or official second source is listed in the Infineon documentation for this depletion-mode MOSFET. The IPD50R950CEAUMA1 is a CoolMOS™ enhancement-mode device with a 500 V rating — it is not a functional equivalent due to the different mode of operation (enhancement vs depletion) and different voltage class."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSS169H6327XTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSS169H6327XTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}