{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSS138N-E6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSS138N-E6327","canonicalUrl":"https://icboms.com/infineon/BSS138N-E6327","factsUrl":"https://icboms.com/api/mcp/products/BSS138N-E6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SIPMOS® N-Channel MOSFET, BSS138N-E6327, 60 V drain-source, 230 mA continuous drain, 3.5 Ohm Rds(on) at 10 V, SOT-23 package, -55°C to 150°C junction temperature.","salesMarkdown":"The Infineon BSS138N-E6327 is a 60 V, 230 mA N-channel enhancement-mode MOSFET from the SIPMOS® family, housed in a standard SOT-23 surface-mount package. It is designed for low-power switching applications such as load switches, DC-DC converter auxiliary rails, signal-level relays, and logic-level level shifting where the 60 V drain-source rating provides comfortable margin on 24 V and 48 V buses. Gate threshold voltage is 1.4 V maximum at 250 µA drain current, so the part is fully enhanced by 3.3 V logic, though with higher Rds(on) than the 10 V condition. ## Temperature range and package — suitability for harsh environments The SOT-23 package (PG-SOT23 supplier package) is a widely used footprint, making board-level replacement straightforward without layout changes. Input capacitance is 41 pF at 25 V drain-source, and total gate charge is 1.4 nC at 10 V, keeping switching losses low in high-frequency converters. Sourcing is limited to independent distribution and surplus inventory. Buyers should verify stock position before committing a BOM line; for new designs, a pin-compatible alternative from the same family should be evaluated.","metaTitle":"Infineon BSS138N-E6327 N-Channel MOSFET, 60 V, 230 mA","metaDescription":"Infineon BSS138N-E6327 N-Channel SIPMOS® MOSFET, 60 V drain-source, 230 mA continuous drain, 3.5 Ohm Rds(on) at 10 V. SOT-23 package, -55°C to 150°C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"SIPMOS®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.4V @ 250µA","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"3.5Ohm @ 230mA, 10V","Power Dissipation (Max)":"360mW (Ta)","Supplier Device Package":"PG-SOT23","Gate Charge (Qg) (Max) @ Vgs":"1.4 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"41 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"230mA (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.2200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/8b13e51e2a2de57b9a7f685f4501b91c.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSS138N-E6327/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSS138N-E6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSS138N-E6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T15:15:24.179Z","lastPublished":"2026-07-16T15:15:24.179Z","indexable":true}}