{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSS123E6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSS123E6327","canonicalUrl":"https://icboms.com/infineon/BSS123E6327","factsUrl":"https://icboms.com/api/mcp/products/BSS123E6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SIPMOS N-Channel MOSFET, 100 V drain-source, 170 mA continuous drain at 25 °C, 6 Ohm Rds(on) at 10 V, SOT-23-3 surface-mount package, -55 to 150 °C junction temperature.","salesMarkdown":"## 100 V N-channel in a SOT-23 — what it was designed for The BSS123E6327: Maximum on-resistance is 6 Ohm at Vgs = 10 V and Id = 170 mA. ## Obsolete — sourcing through independent distribution The BSS123E6327 is listed as Obsolete by Infineon. ## Key ratings for the BOM decision The 100 V drain-source rating is the headline spec: it allows the FET to switch loads on 48 V rails, 72 V telecom buses, or 100 V intermediate buses with margin. The 170 mA continuous drain limit sets the load ceiling — at 170 mA and 6 Ohm Rds(on), conduction loss is about 170 mW, within the 360 mW power dissipation limit at 25 °C ambient. Gate threshold voltage is 1.8 V maximum at 50 µA drain current. Gate charge is 2.67 nC at 10 V.","metaTitle":"Infineon BSS123E6327 SIPMOS N-Channel MOSFET, 100 V, 170 mA","metaDescription":"Infineon BSS123E6327 N-channel MOSFET, 100 V drain-source, 170 mA continuous drain, 6 Ohm Rds(on) at 10 V. SOT-23 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"SIPMOS®","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-236-3, SC-59, SOT-23-3","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.8V @ 50µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"6Ohm @ 170mA, 10V","Power Dissipation (Max)":"360mW (Ta)","Supplier Device Package":"PG-SOT23","Gate Charge (Qg) (Max) @ Vgs":"2.67 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"69 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"170mA (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.4700","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7f462a6e889d7f8e3988f7f701d821a2.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is BSS123E6327 obsolete?","answer":"Yes, Infineon lists the BSS123E6327 as Obsolete. Sourcing is through the surplus and broker channel."},{"question":"What is the replacement for BSS123E6327?","answer":"Infineon has not specified an official replacement for the BSS123E6327. For a new design, look at current-production 100 V N-channel MOSFETs in SOT-23 from Infineon's OptiMOS or StrongIRFET families, or from competitors such as Diodes Inc. or ON Semiconductor — confirm pin-compatibility and Rds(on) targets before substituting."},{"question":"What are the specifications of BSS123E6327?","answer":"N-channel MOSFET, 100 V drain-source, 170 mA continuous drain at 25 °C, 6 Ohm Rds(on) max at 10 V, 2.67 nC gate charge, 69 pF input capacitance, PG-SOT23 package, -55 to 150 °C junction temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSS123E6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSS123E6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}