{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSS119N H7796","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSS119N-H7796","canonicalUrl":"https://icboms.com/infineon/BSS119N-H7796","factsUrl":"https://icboms.com/api/mcp/products/BSS119N%20H7796","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Technologies OptiMOS™ series, Small Signal N-Channel MOSFET, BSS119N H7796, 100 V, 0.19 A, 6 Ohm Rds(on), SMD, Bulk.","salesMarkdown":"## Small-signal N-channel switch for 100 V rails The BSS119N H7796 is an N-channel enhancement-mode MOSFET from Infineon's OptiMOS™ family, designed for low-power switching and load management in 100 V applications. ## Gate drive and switching profile Total gate charge is 0.6 nC at 10 V, keeping the drive energy per switching cycle minimal — useful in battery-powered or high-frequency PWM stages where the gate driver's current budget is tight.","metaTitle":"Infineon BSS119N H7796 N-Channel MOSFET, 100 V, 0.19 A","metaDescription":"Infineon BSS119N H7796 N-Channel OptiMOS™ MOSFET, 100 V, 0.19 A, 6 Ohm Rds(on). Active production. Sourced to order. Request a quote.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±20 V","series":"OptiMOS™","power_w":"0.5","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"100.0","Vgs(Th) (Max) @ Id":"2.3 V @ 13µA","switching_current_a":"0.19","Rds On (Max) @ Id, Vgs":"6Ohm @ 190mA, 10 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"0.6 nC @ 10 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.04","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/a6bd51a1cac68f2fdd8ec8f6967763a7.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSS119N%20H7796/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of BSS119N H7796 at 10 V gate drive?","answer":"The maximum on-resistance is 6 Ohm at 190 mA drain current with 10 V applied to the gate."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSS119N-H7796","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSS119N-H7796 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}