{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSP324L6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSP324L6327","canonicalUrl":"https://icboms.com/infineon/BSP324L6327","factsUrl":"https://icboms.com/api/mcp/products/BSP324L6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SIPMOS N-Channel MOSFET, BSP324L6327, 400 V drain-source, 170 mA continuous drain, 25 Ohm Rds(on) at 10 V, PG-SOT223-4-21 surface mount, -55 to 150 °C.","salesMarkdown":"## 400 V N-channel switch in a SOT-223 footprint It is built on Infineon's SIPMOS technology and comes in the PG-SOT223-4-21 surface-mount package. The part is a good fit for auxiliary bias supplies, offline startup circuits, relay and solenoid drivers, and high-voltage signal switching where the load current stays under 170 mA. ## On-resistance and gate drive — what 25 Ohm means at 170 mA Maximum Rds(on) is 25 Ohm at Vgs = 10 V and Id = 170 mA. At 170 mA the conduction loss is I²R = 0.72 W, which sits inside the 1.8 W power dissipation rating at 25 °C ambient. The gate threshold voltage is 2.3 V max at 94 µA, so a 5 V logic-level gate drive will turn the device on, though the specified Rds(on) is measured at 10 V. Gate charge is 5.9 nC at 10 V — a small figure that keeps switching losses low in a 100 kHz flyback converter. Junction temperature range is -55 °C to 150 °C, covering military and industrial extremes. The 1.8 W power dissipation at 25 °C ambient assumes the SOT-223 copper pad on the PCB is sized per the datasheet layout recommendation — derate above 25 °C. Input capacitance is 154 pF at Vds = 25 V, keeping driver loading light. The part is ROHS3 compliant.","metaTitle":"Infineon BSP324L6327 SIPMOS N-Channel MOSFET, 400 V, 170 mA","metaDescription":"Infineon BSP324L6327 N-channel SIPMOS MOSFET, 400 Vdss, 170 mA continuous drain, 25 Ohm Rds(on) at 10 V. Active production, PG-SOT223-4-21 package.","metaKeywords":null},"attributes":{"series":"SIPMOS®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SIPMOS®","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.3V @ 94µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"25Ohm @ 170mA, 10V","Power Dissipation (Max)":"1.8W (Ta)","Supplier Device Package":"PG-SOT223-4-21","Gate Charge (Qg) (Max) @ Vgs":"5.9 nC @ 10 V","Drain to Source Voltage (Vdss)":"400 V","Input Capacitance (Ciss) (Max) @ Vds":"154 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"170mA (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.27","stockQuantity":0,"priceTiers":[{"qty":1126,"price":"$0.27000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/33b53a356c5b0823ecc6a74a7cee84c8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is BSP324L6327 active or obsolete?","answer":"Active. ROHS3 compliant."},{"question":"What is the Rds(on) of BSP324L6327 at 10 V Vgs?","answer":"The specified drive voltage for achieving max Rds(on) is 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSP324L6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSP324L6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}