{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSP296L6433","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSP296L6433","canonicalUrl":"https://icboms.com/infineon/BSP296L6433","factsUrl":"https://icboms.com/api/mcp/products/BSP296L6433","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SIPMOS N-Channel MOSFET, 100 V, 1.1 A, 700 mOhm @ 1.1 A, 10 V, ±20 V Vgs, PG-SOT223, -55 to 150 °C.","salesMarkdown":"## 100 V N-channel in PG-SOT223 — small-signal switching The Infineon BSP296L6433 is a SIPMOS N-channel MOSFET rated for 100 V drain-source with a continuous drain current of 1.1 A at 25 °C. It comes in a PG-SOT223 surface-mount package, a common footprint for small-signal power switches on mixed-signal boards. ## Gate drive and switching — 4.5 V logic compatible The BSP296L6433 specifies drive voltage for both maximum and minimum Rds(on) at 4.5 V and 10 V, meaning a 5 V logic output or a 3.3 V GPIO buffered through a level shifter can fully enhance the channel. The 1.8 V typical gate threshold at 400 µA confirms low-voltage turn-on capability. Gate charge totals 17.2 nC at 10 V, and input capacitance is 364 pF at 25 V drain. A 5 V gate driver with a 10 Ω series resistor delivers a clean switching edge with minimal ringing — the low Qg keeps the drive current under 10 mA at switching frequencies up to 500 kHz. ## Temperature range and power dissipation Maximum power dissipation is 1.79 W at 25 °C ambient, derated by the junction-to-ambient thermal resistance of the PG-SOT223 pad on a standard FR-4 board.","metaTitle":"Infineon BSP296L6433 SIPMOS N-Channel MOSFET, 100 V, 1.1 A","metaDescription":"Infineon BSP296L6433 SIPMOS N-channel MOSFET, 100 Vdss, 1.1 A, 700 mOhm Rds(on). PG-SOT223 package, -55 to 150°C. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"SIPMOS®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SIPMOS®","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.8V @ 400µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"700mOhm @ 1.1A, 10V","Power Dissipation (Max)":"1.79W (Ta)","Supplier Device Package":"PG-SOT223","Gate Charge (Qg) (Max) @ Vgs":"17.2 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"364 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"1.1A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.25","stockQuantity":0,"priceTiers":[{"qty":1185,"price":"$0.25000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3630596621aa2d5a6c1cf7022832415d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can BSP296L6433 be used with 5 V gate drive?","answer":"Yes. The drive voltage range for minimum on-resistance includes 4.5 V, and the maximum gate threshold is 1.8 V at 400 µA. A 5 V logic output or a 3.3 V GPIO with a level shifter fully enhances the channel."},{"question":"Is BSP296L6433 RoHS compliant?","answer":"Yes, the BSP296L6433 is listed as ROHS3 Compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSP296L6433","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSP296L6433 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}