{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSP135L6433","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSP135L6433","canonicalUrl":"https://icboms.com/infineon/BSP135L6433","factsUrl":"https://icboms.com/api/mcp/products/BSP135L6433","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SIPMOS BSP135L6433, N-Channel Depletion Mode MOSFET, 600 V Vdss, 120 mA Id, 45 Ohm Rds(on) @ 120 mA, 10 V, SOT-223-4 (PG-SOT223-4-21), -55°C to 150°C.","salesMarkdown":"## 600 V depletion-mode MOSFET in a SOT-223 — what it is for The depletion-mode characteristic means the channel is normally on at zero gate voltage (Vgs=0V), and a negative gate voltage is required to turn it off — the opposite of an enhancement-mode MOSFET. This makes it the natural choice for normally-on switch applications, current-source circuits, and linear regulators where a depletion-mode device simplifies the control loop. ## 45 Ohm Rds(on) and 4.9 nC gate charge — switching and conduction trade-offs Maximum on-resistance is 45 Ohm at 120 mA drain current with 10 V gate drive. That is a high Rds(on) by power MOSFET standards, but the 120 mA current rating keeps conduction losses manageable — at full current the I²R loss is about 0.65 W, within the 1.8 W package dissipation limit. The total gate charge is 4.9 nC at 5 V, so the gate drive energy per switching cycle is low; a simple gate-drive circuit from a logic-level output or a small-signal transistor works fine for low-frequency switching up to a few tens of kHz. Input capacitance is 146 pF at 25 V Vds, which means the gate-drive rise time is fast even with modest source impedance. ## Depletion-mode operation — no negative gate voltage needed for turn-off? The BSP135L6433 is a depletion-mode MOSFET, so at Vgs=0V the channel conducts. To turn the device off, the gate must be driven negative relative to the source — typically -5 V to -10 V for a hard cutoff. The maximum gate-source voltage rating is ±20 V, so a -10 V gate drive is within the safe operating area. This is a critical design consideration: in a circuit that expects an enhancement-mode part, the BSP135L6433 will conduct continuously unless the gate is actively pulled negative. The drive voltage for minimum Rds(on) is 10 V; for zero Rds(on) the drive voltage is 0 V (the on-condition). ## PG-SOT223-4-21 package — footprint and thermal reality The large tab on the package is the drain terminal and provides the primary thermal path. With 1.8 W maximum power dissipation at 25°C ambient, the junction-to-ambient thermal resistance is around 70-80 °C/W depending on PCB copper area. For continuous operation near the 150°C junction limit, a minimum of 1 square inch of copper on the drain tab is recommended. It is a current-production part in the SIPMOS series with no announced end-of-life or last-time-buy schedule. For new designs, this means no near-term obsolescence risk.","metaTitle":"Infineon BSP135L6433 SIPMOS N-Ch Depletion MOSFET, 600 V","metaDescription":"Infineon BSP135L6433 SIPMOS N-channel depletion-mode MOSFET, 600 V Vdss, 120 mA Id, 45 Ohm Rds(on). SOT-223 surface mount. Active lifecycle.","metaKeywords":null},"attributes":{"series":"SIPMOS®","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SIPMOS®","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"Depletion Mode","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 94µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"45Ohm @ 120mA, 10V","Power Dissipation (Max)":"1.8W (Ta)","Supplier Device Package":"PG-SOT223-4-21","Gate Charge (Qg) (Max) @ Vgs":"4.9 nC @ 5 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"146 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"0V, 10V","Current - Continuous Drain (Id) @ 25°C":"120mA (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.41","stockQuantity":0,"priceTiers":[{"qty":726,"price":"$0.41000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b842c6c06d896e263852337d57e1c84e.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Does BSP135L6433 require a negative gate voltage to turn off?","answer":"Yes. Because it is a depletion-mode MOSFET, the channel conducts at Vgs=0V. The maximum Vgs rating is ±20 V, so a -10 V gate drive is safe."},{"question":"What is the difference between BSP135L6433 and BSP135?","answer":"The BSP135L6433 is a specific ordering code variant of the BSP135 depletion-mode MOSFET. The 'L6433' suffix typically denotes a specific packaging, tape-and-reel, or qualification variant. The core electrical specifications — 600 V Vdss, 120 mA Id, 45 Ohm Rds(on), depletion-mode operation — are identical. The BSP135L6433 is supplied in Bulk packaging rather than tape and reel."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSP135L6433","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSP135L6433 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}