{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSP129H6327XTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSP129H6327XTSA1","canonicalUrl":"https://icboms.com/infineon/BSP129H6327XTSA1","factsUrl":"https://icboms.com/api/mcp/products/BSP129H6327XTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SIPMOS® BSP129H6327XTSA1, N-channel depletion-mode MOSFET, 240 V Vdss, 350 mA continuous drain, 6 Ω Rds(on) at 10 V, PG-SOT223-4 surface-mount package, -55°C to 150°C operating junction temperature.","salesMarkdown":"## Depletion-mode MOSFET for normally-on and current-source applications The Infineon BSP129H6327XTSA1 is an N-channel depletion-mode MOSFET from the SIPMOS® series. Unlike a standard enhancement-mode FET, this part conducts at zero gate-source voltage — it is normally on — and requires a negative Vgs to turn it off. That makes it the natural choice for normally-on switch applications, current-limiting circuits, cascode stages, and start-up pass elements where you need conduction at power-up before the gate drive is established. Rated for 240 V drain-source voltage and 350 mA continuous drain current at 25°C, with a maximum on-resistance of 6 Ω at Vgs = 10 V and Id = 350 mA. The low gate charge — 5.7 nC at 5 V — means a simple GPIO or a low-current gate driver can switch it without a dedicated driver IC. Housed in a PG-SOT223-4 surface-mount package, it dissipates up to 1.8 W at 25°C ambient. The 240 V Vdss is the absolute maximum drain-source voltage the device can block when turned off. It fits DC rails up to 240 V or AC circuits where the peak is clamped below 240 V. ## SOT223-4 — rework-friendly footprint The PG-SOT223-4 package has a large centre tab that is the drain. The 1.8 W dissipation assumes the tab is soldered to a copper pad on the PCB. It is fully RoHS3 compliant.","metaTitle":"BSP129H6327XTSA1 SIPMOS® N-Ch Depletion MOSFET, 240V, 350mA","metaDescription":"BSP129H6327XTSA1 N-channel depletion-mode MOSFET from Infineon SIPMOS® series. 240 V Vdss, 350 mA Id, 6 Ω Rds(on), SOT223-4. Active, RoHS3.","metaKeywords":null},"attributes":{"series":"SIPMOS®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SIPMOS®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"Depletion Mode","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1V @ 108µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"6Ohm @ 350mA, 10V","Power Dissipation (Max)":"1.8W (Ta)","Supplier Device Package":"PG-SOT223-4","Gate Charge (Qg) (Max) @ Vgs":"5.7 nC @ 5 V","Drain to Source Voltage (Vdss)":"240 V","Input Capacitance (Ciss) (Max) @ Vds":"108 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"0V, 10V","Current - Continuous Drain (Id) @ 25°C":"350mA (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.83","priceTiers":[{"qty":1,"price":"$0.83000","currency":"USD"},{"qty":10,"price":"$0.68300","currency":"USD"},{"qty":100,"price":"$0.53130","currency":"USD"},{"qty":500,"price":"$0.45034","currency":"USD"},{"qty":1000,"price":"$0.36686","currency":"USD"},{"qty":2000,"price":"$0.34535","currency":"USD"},{"qty":5000,"price":"$0.32891","currency":"USD"},{"qty":10000,"price":"$0.31373","currency":"USD"},{"qty":25000,"price":"$0.31312","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2d40230384cc32fbf4c311024cf60a19.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSP129H6327XTSA1/alternatives.json"},"ai":{"faq":[{"question":"Is BSP129H6327XTSA1 suitable for 240V AC applications?","answer":"No. The 240 V Vdss rating is the absolute maximum drain-source voltage. In a 240 V AC line, the peak voltage is approximately 340 V, which exceeds this rating."},{"question":"Can BSP129H6327XTSA1 be used in high-side switching?","answer":"Yes. Because it is a depletion-mode MOSFET (normally on at Vgs = 0 V), high-side switching is straightforward — you only need a negative gate voltage to turn it off, no bootstrapped gate drive above the rail. The ±20 V Vgs max provides ample margin for a -5 V to -15 V turn-off signal."},{"question":"Is BSP129H6327XTSA1 RoHS compliant?","answer":"Yes, it is RoHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSP129H6327XTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSP129H6327XTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}