{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSP125H6327XTSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSP125H6327XTSA1","canonicalUrl":"https://icboms.com/infineon/BSP125H6327XTSA1","factsUrl":"https://icboms.com/api/mcp/products/BSP125H6327XTSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SIPMOS® N-Channel MOSFET, 600V Vdss, 120mA Id, 45Ohm Rds(on) @ 120mA/10V, PG-SOT223-4 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V small-signal MOSFET in SOT-223 The Infineon BSP125H6327XTSA1 is an N-channel enhancement-mode MOSFET from the SIPMOS® family, rated for 600 V drain-source voltage and 120 mA continuous drain current. It comes in a PG-SOT223-4 surface-mount package with a tab for heat sinking. The wide junction temperature range from -55°C to 150°C qualifies it for industrial, automotive under-hood, and outdoor telecom environments where thermal cycling is severe. Gate threshold voltage maximum is 2.3 V at 94 µA drain current. ## Package, mounting, and thermal notes Maximum power dissipation is 1.8 W at 25°C ambient, derated above that. It is ROHS3 compliant, with no halogen or lead restrictions that would block use in EU or North American markets. The SIPMOS® series is a mature high-voltage MOSFET platform; second-source options from other manufacturers exist in the same SOT-223 footprint, but Infineon is the primary source for this specific order code.","metaTitle":"Infineon BSP125H6327XTSA1 N-Channel MOSFET, 600V, 120mA","metaDescription":"Infineon SIPMOS N-channel MOSFET, 600V Vdss, 120mA Id, 45 Ohm Rds(on), SOT-223-4. Active lifecycle, -55 to 150°C.","metaKeywords":null},"attributes":{"series":"SIPMOS®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SIPMOS®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.3V @ 94µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"45Ohm @ 120mA, 10V","Power Dissipation (Max)":"1.8W (Ta)","Supplier Device Package":"PG-SOT223-4","Gate Charge (Qg) (Max) @ Vgs":"6.6 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"150 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"120mA (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.03","priceTiers":[{"qty":1,"price":"$1.03000","currency":"USD"},{"qty":10,"price":"$0.90800","currency":"USD"},{"qty":100,"price":"$0.69600","currency":"USD"},{"qty":500,"price":"$0.55016","currency":"USD"},{"qty":1000,"price":"$0.44013","currency":"USD"},{"qty":2000,"price":"$0.39887","currency":"USD"},{"qty":5000,"price":"$0.37136","currency":"USD"},{"qty":10000,"price":"$0.35880","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f48c6b26708dbac5b2ed6cd6ccdb4c60.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSP125H6327XTSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of BSP125?","answer":"Maximum on-resistance is 45 Ohms at 120 mA drain current with 10 V gate drive, as specified in the datasheet."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSP125H6327XTSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSP125H6327XTSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}