{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSO303SP","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSO303SP","canonicalUrl":"https://icboms.com/infineon/BSO303SP","factsUrl":"https://icboms.com/api/mcp/products/BSO303SP","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS® -P BSO303SP, P-Channel Power MOSFET, 30 V Vdss, 21 mOhm Rds(on) at 9.1 A, 7.2 A continuous drain, 54 nC gate charge, PG-DSO-8-1 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 21 mOhm Rds(on) at 9.1 A — the conduction loss floor for a P-channel SO-8 The BSO303SP is a P-Channel enhancement-mode MOSFET from Infineon's OptiMOS® -P series. Its maximum on-resistance is 21 mOhm at 9.1 A drain current and 10 V gate drive. ## 7.2 A continuous drain — thermal-package limited, not silicon-limited The continuous drain current is rated at 7.2 A at 25 °C ambient, with maximum power dissipation of 1.56 W. Above 25 °C the current must be derated per the PG-DSO-8-1 package thermal resistance. ## 54 nC gate charge — drive current needed for switching frequency Total gate charge is 54 nC at 10 V. The input capacitance is 2330 pF at 25 V drain bias. ## Package and footprint — PG-DSO-8-1 (SOIC-8) The gate threshold voltage is 2 V maximum at 100 µA drain current.","metaTitle":"BSO303SP P-Channel MOSFET, 30 V, 21 mOhm, OptiMOS-P, SOIC-8","metaDescription":"BSO303SP P-Channel MOSFET from Infineon OptiMOS-P series. 30 V Vdss, 21 mOhm Rds(on) at 9.1 A, 7.2 A continuous drain. Active production, RoHS non-compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS® -P","packageCase":null,"mountingType":null,"rohsStatus":"RoHS non-compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS® -P","Package":"Bulk","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 100µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"21mOhm @ 9.1A, 10V","Power Dissipation (Max)":"1.56W (Ta)","Supplier Device Package":"PG-DSO-8-1","Gate Charge (Qg) (Max) @ Vgs":"54 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"2330 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"7.2A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.4","stockQuantity":0,"priceTiers":[{"qty":751,"price":"$0.40000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/9b616d228e627b49be22e6213ed97e58.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSO303SP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSO303SP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}