{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSO220N03MDGXUMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSO220N03MDGXUMA1","canonicalUrl":"https://icboms.com/infineon/BSO220N03MDGXUMA1","factsUrl":"https://icboms.com/api/mcp/products/BSO220N03MDGXUMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS BSO220N03MDGXUMA1, dual N-channel MOSFET, 30V Vdss, 6A continuous drain, 22mOhm Rds(on) at 10V, logic-level gate, SOIC-8 package, -55°C to 150°C.","salesMarkdown":"The BSO220N03MDGXUMA1 is an Infineon OptiMOS dual N-channel MOSFET rated for 30 V drain-to-source and 6 A continuous drain current per channel at 25 °C case temperature. The logic-level gate threshold (2.1 V max at 250 µA) means a 5 V logic output can fully enhance the channel without a separate gate-driver IC. For 3.3 V logic, a small level-shifter or a driver with 5 V output is still needed to hit the 10 V gate drive that achieves the rated Rds(on). ## Parametric deep-dive — gate charge, capacitance, and switching speed Total gate charge is 10 nC at 10 V gate drive. For a 500 kHz switching frequency, the average gate-drive current is 10 nC × 500 kHz = 5 mA — easily supplied by a standard MOSFET driver or a microcontroller GPIO with a series resistor. Input capacitance is 800 pF at 15 V drain-to-source. This capacitance, combined with the gate-drive source impedance, sets the turn-on and turn-off delay. A 10 Ω gate resistor yields an RC time constant of 8 ns, so the switching edges stay clean for most hard-switched applications below 1 MHz.","metaTitle":"BSO220N03MDGXUMA1 Infineon OptiMOS Dual N-Ch MOSFET, 30V 6A","metaDescription":"Infineon OptiMOS BSO220N03MDGXUMA1 dual N-channel MOSFET, 30V Vdss, 6A Id, 22mOhm Rds(on) at 10V. Active lifecycle, SOIC-8.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","Technology":"MOSFET (Metal Oxide)","FET Feature":"Logic Level Gate","Power - Max":"1.4W","Configuration":"2 N-Channel (Dual)","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.1V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"22mOhm @ 7.7A, 10V","Supplier Device Package":"PG-DSO-8","Gate Charge (Qg) (Max) @ Vgs":"10nC @ 10V","Drain to Source Voltage (Vdss)":"30V","Input Capacitance (Ciss) (Max) @ Vds":"800pF @ 15V","Current - Continuous Drain (Id) @ 25°C":"6A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.89","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.89000","currency":"USD"},{"qty":10,"price":"$0.73000","currency":"USD"},{"qty":100,"price":"$0.56780","currency":"USD"},{"qty":500,"price":"$0.48128","currency":"USD"},{"qty":1000,"price":"$0.39205","currency":"USD"},{"qty":2500,"price":"$0.36906","currency":"USD"},{"qty":5000,"price":"$0.35149","currency":"USD"},{"qty":12500,"price":"$0.33527","currency":"USD"},{"qty":25000,"price":"$0.33462","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/50faf3770365b19775fbd852765b10bb.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can BSO220N03MDGXUMA1 be used with 5V logic?","answer":"Yes. The logic-level gate threshold (2.1 V max at 250 µA) ensures the MOSFET is fully enhanced with a 5 V gate drive. For the rated 22 mOhm Rds(on), a 10 V gate drive is specified, but at 5 V the on-resistance will be higher — check the typical Rds(on) vs Vgs curve in the datasheet for your exact load current."},{"question":"Is BSO220N03MDGXUMA1 suitable for battery protection circuits?","answer":"The 30 V drain-source rating and 6 A continuous current are appropriate for 1- to 4-cell lithium-ion battery packs where the protection MOSFETs switch the load at 12 V to 16 V. The dual-channel configuration allows a single package to handle the charge and discharge paths. The logic-level gate ensures the protection IC can drive the MOSFETs directly."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSO220N03MDGXUMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSO220N03MDGXUMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}