{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSO203SPNT","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSO203SPNT","canonicalUrl":"https://icboms.com/infineon/BSO203SPNT","factsUrl":"https://icboms.com/api/mcp/products/BSO203SPNT","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS® P-Channel Power MOSFET, 20 V drain-source, 9 A continuous drain, 21 mOhm Rds(on) at 4.5 V gate drive, 8-SOIC package, surface mount, -55°C to 150°C junction temperature.","salesMarkdown":"The BSO203SPNT: Surface-mount in the PG-DSO-8 (0.154\" width, 3.90 mm body) — Infineon's PG-DSO-8 variant. The SOIC-8 footprint is standard, so board layout is straightforward. The thermal pad is the die attach through the package leads; there's no exposed pad, so thermal management relies on the PCB copper area connected to the drain pins. For the 2.35 W dissipation limit, a decent pour on the drain pins is enough for moderate duty cycles, but sustained 9 A will need attention to trace width and via stitching. That makes it suitable for avionics, downhole, or outdoor telecom where the ambient can swing hard. The 150°C Tj max is the silicon limit, but the 2.35 W dissipation at Ta means actual case temperature will be the bottleneck in a hot enclosure. The part is in current manufacture by Infineon as part of the OptiMOS series.","metaTitle":"Infineon BSO203SPNT P-Channel OptiMOS MOSFET, 20V 9A SOIC-8","metaDescription":"Infineon BSO203SPNT P-Channel OptiMOS power MOSFET in SOIC-8. 20V Vdss, 9A continuous drain, 21mOhm Rds(on) at 4.5V. Active production.","metaKeywords":null},"attributes":{"series":"OptiMOS®","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS®","Package":"Bulk","FET Type":"P-Channel","Vgs (Max)":"±12V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"1.2V @ 50µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"21mOhm @ 9A, 4.5V","Power Dissipation (Max)":"2.35W (Ta)","Supplier Device Package":"PG-DSO-8","Gate Charge (Qg) (Max) @ Vgs":"50.4 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"20 V","Input Capacitance (Ciss) (Max) @ Vds":"2265 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"2.5V, 4.5V","Current - Continuous Drain (Id) @ 25°C":"9A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.51","priceTiers":[{"qty":592,"price":"$0.51000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/29bfc8afe512155b49343895f2f7b844.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSO203SPNT/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of BSO203SPNT?","answer":"The maximum on-resistance is 21 mOhm at 9 A drain current with a 4.5 V gate drive. That's the value to use for conduction loss calculations at the rated current."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSO203SPNT","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSO203SPNT when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}