{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSD214SNL6327","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSD214SNL6327","canonicalUrl":"https://icboms.com/infineon/BSD214SNL6327","factsUrl":"https://icboms.com/api/mcp/products/BSD214SNL6327","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™2 series, BSD214SNL6327 small-signal N-channel MOSFET, 20 V Vds, 1.5 A switching current, 140 mOhm Rds(on) at 4.5 V, 0.5 W power dissipation, SMD, -55 to 150 °C Tj.","salesMarkdown":"## Active production — small-signal N-channel for load switching The Infineon BSD214SNL6327 is a small-signal N-channel MOSFET from the OptiMOS™2 series, rated for 20 V drain-source and 1.5 A continuous switching current. ## 140 mOhm on-resistance at 4.5 V gate drive The Rds(on) is specified at 140 mOhm maximum with 4.5 V on the gate and 1.5 A drain current — a typical logic-level gate-drive voltage. At 1.5 A the conduction loss is 315 mW, which fits within the 0.5 W power dissipation limit with margin for switching losses. Gate charge is just 0.8 nC at 5 V Vgs, so a microcontroller GPIO or a low-current driver can switch the gate without an external driver IC. The threshold voltage is 1.2 V max at 3.7 µA, confirming logic-level turn-on. ## Junction temperature range -55 to 150 °C The operating junction temperature spans -55 to 150 °C, covering automotive under-hood and industrial environments where ambient temperatures push past 125 °C. The absolute maximum gate-source voltage is ±12 V, which gives headroom for gate-drive overshoot in noisy supplies.","metaTitle":"Infineon BSD214SNL6327 N-Channel MOSFET, 20 V, 1.5 A","metaDescription":"Infineon BSD214SNL6327 small-signal N-channel MOSFET, 20 V Vds, 1.5 A, 140 mOhm Rds(on) at 4.5 V. Active production, SMD, -55 to 150 °C.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Vgs":"±12 V","series":"OptiMOS™2","power_w":"0.5","Fet Type":"N-Channel","package_type":"Bulk","mounting_type":"Surface Mount","capacitance_uf":"0.0001","product_status":"Active","lifecycle_stage":"eol_hot","supply_voltage_v":"20.0","Vgs(Th) (Max) @ Id":"1.2 V @ 3.7µA","switching_current_a":"1.5","Rds On (Max) @ Id, Vgs":"140mOhm @ 1.5 A, 4.5 V","Operating Temperature High":"-55°C to 150°C(TJ)","Gate Charge (Qg) (Max) @ Vgs":"0.8 nC @ 5 V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.05","stockQuantity":0,"priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0d2b4e5f1062447be7f13302066292d8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of BSD214SNL6327?","answer":"The maximum Rds(on) is 140 mOhm at 4.5 V gate-source voltage and 1.5 A drain current."},{"question":"What is the maximum power dissipation of BSD214SNL6327?","answer":"The maximum power dissipation is 0.5 W."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSD214SNL6327","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSD214SNL6327 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}