{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC889N03LSG","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC889N03LSG","canonicalUrl":"https://icboms.com/infineon/BSC889N03LSG","factsUrl":"https://icboms.com/api/mcp/products/BSC889N03LSG","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ 3 BSC889N03LSG, N-Channel MOSFET, 30 V Vdss, 9 mOhm Rds(on) at 30 A, 16 nC gate charge, PG-TDSON-8 package, -55 to 150 °C.","salesMarkdown":"## 9 mOhm at 30 A — the conduction-loss anchor for a synchronous buck The BSC889N03LSG: 9 mOhm maximum on-resistance at 30 A drain current with 10 V gate drive. 16 nC total gate charge at 10 V. ## Dual current rating — the thermal interface decides the real limit The datasheet lists 45 A continuous drain current at the case temperature (Tc) and 13 A at ambient (Ta). That spread tells you the silicon can handle 45 A if the exposed pad on the PG-TDSON-8 package is soldered to a large copper plane on a multi-layer board. At 13 A ambient with 2.5 W dissipation (Ta rating), the junction stays below 150 °C only if the board copper does the heatsinking. The 28 W case-power limit assumes a heatsink or chassis contact — without it the thermal impedance through the PCB dominates. ## Gate drive window and switching behaviour Drive voltage range of 4.5 V to 10 V for achieving the rated Rds(on). At 4.5 V the on-resistance will be higher than the 9 mOhm figure — the 10 V drive is the condition for the minimum Rds(on) spec. ## Package and footprint — PG-TDSON-8 The 8-PowerTDFN (PG-TDSON-8) is a surface-mount package with an exposed drain pad on the bottom. ## Lifecycle and compliance It is ROHS3 compliant. Sourcing is through standard independent distribution channels, quoted to order against the BOM quantity.","metaTitle":"BSC889N03LSG N-Channel MOSFET, 30 V, 9 mOhm, OptiMOS 3","metaDescription":"BSC889N03LSG N-channel power MOSFET, 30 V drain-source, 9 mOhm Rds(on) at 30 A, 16 nC gate charge. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™ 3","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™ 3","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"9mOhm @ 30A, 10V","Power Dissipation (Max)":"2.5W (Ta), 28W (Tc)","Supplier Device Package":"PG-TDSON-8","Gate Charge (Qg) (Max) @ Vgs":"16 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"1300 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"13A (Ta), 45A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.27","stockQuantity":0,"priceTiers":[{"qty":1126,"price":"$0.27000","currency":"USD"}]},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/7h5aoaichv/INFNS15760-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC889N03LSG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC889N03LSG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}