{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC883N03LSG","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC883N03LSG","canonicalUrl":"https://icboms.com/infineon/BSC883N03LSG","factsUrl":"https://icboms.com/api/mcp/products/BSC883N03LSG","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ 3 BSC883N03LSG N-channel power MOSFET, 34 V Vdss, 3.8 mOhm max at 30 A, 10 V, 98 A continuous drain, PG-TDSON-8 package, surface mount.","salesMarkdown":"## 3.8 mOhm at 10 V — conduction loss anchor The BSC883N03LSG from Infineon's OptiMOS™ 3 family is an N-channel power MOSFET rated for a maximum drain-source voltage of 34 V and continuous drain current of 98 A at case temperature. Its on-resistance of 3.8 mOhm at 30 A, 10 V gate drive sets the conduction loss floor for high-efficiency switching applications such as synchronous rectification in DC-DC converters and load switches in 12 V automotive or industrial power rails. ## Gate charge and switching speed Total gate charge is 34 nC at 10 V, which translates to a gate-drive current requirement of roughly 3.4 mA average per 100 kHz switching frequency — well within the capability of standard MOSFET drivers. The input capacitance of 2800 pF at 15 V drain-source helps the designer size the gate-drive loop for clean turn-on without excessive ringing.","metaTitle":"BSC883N03LSG OptiMOS 3 N-Channel Power MOSFET","metaDescription":"Infineon BSC883N03LSG N-channel MOSFET, 34 V Vdss, 3.8 mOhm Rds(on) at 10 V, 98 A continuous drain. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™ 3","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™ 3","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"3.8mOhm @ 30A, 10V","Power Dissipation (Max)":"2.5W (Ta), 57W (Tc)","Supplier Device Package":"PG-TDSON-8","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"34 V","Input Capacitance (Ciss) (Max) @ Vds":"2800 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"17A (Ta), 98A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.33","stockQuantity":0,"priceTiers":[{"qty":916,"price":"$0.33000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/5fe530c79c27ec1fbf40dafc32d5f022.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of BSC883N03LSG at 10 V?","answer":"This figure is the key parameter for conduction loss estimation in high-current switching designs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC883N03LSG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC883N03LSG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}