{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC882N03LS G","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC882N03LS-G","canonicalUrl":"https://icboms.com/infineon/BSC882N03LS-G","factsUrl":"https://icboms.com/api/mcp/products/BSC882N03LS%20G","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™3 M BSC882N03LS G, N-Channel MOSFET, 34 V Vdss, 4.2 mOhm Rds(on) @ 30 A, 10 V, 8-PowerTDFN (PG-TDSON-8-6), -55°C to 150°C, Active.","salesMarkdown":"## 34 V N-channel MOSFET for high-density switching The Infineon BSC882N03LS G is a 34 V N-channel power MOSFET from the OptiMOS™3 M series, built on a metal-oxide trench technology. The ±20 V Vgs max gives headroom for gate-drive transients. Input capacitance is 3700 pF at 15 V drain-source. The BSC882N03LS G is listed as Active on the Infineon product line.","metaTitle":"Infineon BSC882N03LS G N-Channel MOSFET, 34 V, 4.2 mOhm","metaDescription":"Infineon BSC882N03LS G OptiMOS™3 M N-channel MOSFET, 34 V drain-source, 4.2 mOhm Rds(on) at 30 A, 10 V. 8-PowerTDFN package, -55°C to 150°C.","metaKeywords":null},"attributes":{"series":"OptiMOS™3 M","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™3 M","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"4.2mOhm @ 30A, 10V","Supplier Device Package":"PG-TDSON-8-6","Drain to Source Voltage (Vdss)":"34 V","Input Capacitance (Ciss) (Max) @ Vds":"3700 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"10V"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.39","priceTiers":[{"qty":702,"price":"$0.43000","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSC882N03LS%20G/alternatives.json"},"ai":{"faq":[{"question":"Is BSC882N03LS G a logic-level MOSFET?","answer":"No — the specified Rds(on) is at 10 V gate drive, and the maximum threshold voltage is 2.2 V at 250 µA. It is not characterized for 5 V or 3.3 V gate drive; a logic-level MOSFET would specify Rds(on) at 4.5 V or lower."},{"question":"What is the replacement for BSC882N03LS G?","answer":"No official replacement or successor is listed. The peer BSC882N03LSG carries identical electrical ratings and the same package — it is the same die in a different ordering code variant. For a functional cross, compare the 34 V, 4.2 mOhm, 8-PowerTDFN profile against other OptiMOS™3 M parts in the same voltage class."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC882N03LS-G","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC882N03LS-G when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}