{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC600N25NS3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC600N25NS3GATMA1","canonicalUrl":"https://icboms.com/infineon/BSC600N25NS3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSC600N25NS3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS N-Channel MOSFET, 250 V drain-source, 25 A continuous drain, 60 mOhm Rds(on) at 10 V, 29 nC gate charge, PG-TDSON-8-1 package, -55°C to 150°C junction temperature.","salesMarkdown":"## 250 V N-channel in a compact TDSON-8 — what the ratings mean for the BOM The Infineon BSC600N25NS3GATMA1 is a 250 V N-channel MOSFET from the OptiMOS series, rated for 25 A continuous drain current at 25 °C case temperature. The 60 mOhm maximum on-resistance at 10 V gate drive defines the conduction loss at full load. The part is housed in a PG-TDSON-8-1 package — an 8-lead PowerTDFN with an exposed pad for thermal dissipation. The surface-mount footprint is standard for this class, but the pad layout and solder-paste stencil aperture must match the manufacturer's land pattern to achieve the rated thermal resistance. The junction temperature range spans -55°C to 150°C, covering military and automotive thermal extremes.","metaTitle":"Infineon BSC600N25NS3GATMA1 N-Channel MOSFET, 250 V, 25 A","metaDescription":"Infineon OptiMOS N-channel MOSFET, 250 Vdss, 25 A continuous drain, 60 mOhm Rds(on) at 10 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 90µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"60mOhm @ 25A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"PG-TDSON-8-1","Gate Charge (Qg) (Max) @ Vgs":"29 nC @ 10 V","Drain to Source Voltage (Vdss)":"250 V","Input Capacitance (Ciss) (Max) @ Vds":"2350 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.45","priceTiers":[{"qty":1,"price":"$3.45000","currency":"USD"},{"qty":10,"price":"$2.89600","currency":"USD"},{"qty":100,"price":"$2.34270","currency":"USD"},{"qty":500,"price":"$2.08238","currency":"USD"},{"qty":1000,"price":"$1.78304","currency":"USD"},{"qty":2000,"price":"$1.67892","currency":"USD"},{"qty":5000,"price":"$1.61075","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/dc0fd7e86315f8fcfea8abfb690f3994.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSC600N25NS3GATMA1/alternatives.json"},"ai":{"faq":[{"question":"Can I replace BSC600N25NS3G with another Infineon MOSFET?","answer":"If the replacement must match the 250 V, 25 A, 60 mOhm rating and the TDSON-8 footprint, the BSC600N25NS3G is the active part. The IPD50R950CEAUMA1 is a 500 V device with lower current and higher on-resistance — it is not a functional replacement for this BOM line."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC600N25NS3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC600N25NS3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}