{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC252N10NSFGATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC252N10NSFGATMA1","canonicalUrl":"https://icboms.com/infineon/BSC252N10NSFGATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSC252N10NSFGATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS N-Channel MOSFET, 100 V Vdss, 40 A continuous drain (Tc), 25.2 mOhm Rds(on) at 20 A, 10 V gate drive, PG-TDSON-8-1 package, -55°C to 150°C junction temperature.","salesMarkdown":"The Infineon BSC252N10NSFGATMA1 is a 100 V N-channel MOSFET from the OptiMOS series, housed in a PG-TDSON-8-1 package. It is rated for a continuous drain current of 40 A when the case temperature is held at 25°C, and 7.2 A when the ambient air is the thermal reference — the 40 A figure is the one to use for a heatsinked or board-mounted design where the exposed pad carries the heat to the PCB copper. The 25.2 mOhm maximum on-resistance at 20 A drain current and 10 V gate drive sets the conduction-loss floor for a synchronous buck, an OR-ing diode replacement, or a load switch on a 48 V or 24 V rail. At 20 A the I²R loss is about 10 W — the 78 W maximum power dissipation at the case gives plenty of headroom when the thermal interface is properly managed. ## Gate charge and switching speed — sizing the driver Total gate charge at 10 V is 17 nC, which is low for a 100 V / 40 A device. A typical gate driver delivering 1 A peak can charge the gate in about 17 ns, making this part usable in hard-switching topologies above 100 kHz without the driver spending most of its output current on reactive charge. Input capacitance is 1100 pF at 50 V drain-source. That capacitance, combined with the low gate charge, keeps the Miller plateau short — the switching losses in a 200 kHz LLC converter stay manageable without a bootstrap booster. ## Temperature range and deployment envelope The 150°C maximum junction temperature is the absolute ceiling — the 78 W power dissipation rating assumes the case is held at 25°C, so real-world derating is needed above that ambient. ## Lifecycle and supply posture It is ROHS3 compliant.","metaTitle":"Infineon BSC252N10NSFGATMA1 N-Channel MOSFET, 100V, 40A","metaDescription":"Infineon OptiMOS N-channel MOSFET, 100 V Vdss, 40 A continuous drain at Tc, 25.2 mOhm Rds(on) at 20 A. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 43µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"25.2mOhm @ 20A, 10V","Power Dissipation (Max)":"78W (Tc)","Supplier Device Package":"PG-TDSON-8-1","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"1100 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.2A (Ta), 40A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.52","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.52000","currency":"USD"},{"qty":10,"price":"$1.35600","currency":"USD"},{"qty":100,"price":"$1.05750","currency":"USD"},{"qty":500,"price":"$0.87356","currency":"USD"},{"qty":1000,"price":"$0.68966","currency":"USD"},{"qty":2000,"price":"$0.64368","currency":"USD"},{"qty":5000,"price":"$0.61149","currency":"USD"},{"qty":10000,"price":"$0.59970","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f4f35fd41341817c65aef69562633ead.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the replacement or equivalent for BSC252N10NSFGATMA1?","answer":"For a form-fit-function substitute within the OptiMOS 100 V family, compare the Rds(on) and gate charge ratings against other PG-TDSON-8-1 devices at the same voltage class — the 25.2 mOhm on-resistance at 20 A is the parametric anchor."},{"question":"What is the maximum continuous drain current I should design for?","answer":"The 40 A rating at case temperature (Tc) is the package-limited current when the exposed pad is soldered to adequate PCB copper. The 7.2 A at ambient temperature (Ta) is the board-limited figure with no heatsink — use the 40 A figure for a properly thermally managed design."},{"question":"What gate drive voltage does this MOSFET need for minimum on-resistance?","answer":"The Rds(on) is specified at 10 V gate drive. The drive voltage range for achieving the rated on-resistance is 10 V — a 5 V logic-level gate signal will not fully enhance the channel."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC252N10NSFGATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC252N10NSFGATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}