{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC190N12NS3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC190N12NS3GATMA1","canonicalUrl":"https://icboms.com/infineon/BSC190N12NS3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/BSC190N12NS3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ series, N-Channel MOSFET, 120 V drain-source, 44 A continuous drain (Tc), 19 mOhm Rds(on) at 10 V, 8-PowerTDFN package, PG-TDSON-8-1, -55°C to 150°C.","salesMarkdown":"The Infineon BSC190N12NS3GATMA1 is a 120 V N-channel MOSFET from the OptiMOS series, built for medium-voltage switching where conduction loss matters. The 19 mOhm typical on-resistance at 10 V gate drive keeps dissipation low in a 44 A continuous-drain design at case temperature, though the 8.6 A rating at ambient is the real limit on a bare board without a heatsink. The 8-PowerTDFN package (PG-TDSON-8-1) is a surface-mount, thermally enhanced footprint that pulls heat into the PCB copper — expect to pour copper on the drain tab if you plan to push past a few amps. ## Gate drive and switching — 10 V is the target This part is specified for a 10 V gate drive to achieve minimum Rds(on); the gate threshold is 4 V max at 42 µA drain current, but don't expect full enhancement below 10 V. The ±20 V Vgs max gives headroom for ringing on long gate traces, but keep the steady-state drive at 10 V to stay inside the safe operating area. ## Temperature range and thermal limits If the board runs hot, derate the continuous current from the 44 A Tc figure; the 8.6 A Ta rating is the conservative starting point for a convection-cooled layout. ROHS3 compliance is confirmed, which simplifies compliance for EU and RoHS-regulated markets.","metaTitle":"Infineon BSC190N12NS3GATMA1 N-Channel MOSFET, 120 V, 44 A","metaDescription":"Infineon BSC190N12NS3GATMA1 N-channel 120 V MOSFET, 44 A continuous drain, 19 mOhm Rds(on). Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-PowerTDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 42µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"19mOhm @ 39A, 10V","Power Dissipation (Max)":"69W (Tc)","Supplier Device Package":"PG-TDSON-8-1","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"120 V","Input Capacitance (Ciss) (Max) @ Vds":"2300 pF @ 60 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8.6A (Ta), 44A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.69","priceTiers":[{"qty":1,"price":"$1.69000","currency":"USD"},{"qty":10,"price":"$1.40000","currency":"USD"},{"qty":100,"price":"$1.11450","currency":"USD"},{"qty":500,"price":"$0.94308","currency":"USD"},{"qty":1000,"price":"$0.80018","currency":"USD"},{"qty":2000,"price":"$0.76018","currency":"USD"},{"qty":5000,"price":"$0.73160","currency":"USD"},{"qty":10000,"price":"$0.70738","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/59e63f98e2ebeffd33f957f26ba62ecb.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/BSC190N12NS3GATMA1/alternatives.json"},"ai":{"faq":[{"question":"Is BSC190N12NS3GATMA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant per the Infineon documentation."},{"question":"Can BSC190N12NS3GATMA1 replace BSC190N12NS3G?","answer":"The order code BSC190N12NS3GATMA1 is the standard tape-and-reel suffix variant of the base BSC190N12NS3G device. Electrically they are the same die; the suffix difference is packaging and reel quantity. Confirm the reel format matches your pick-and-place setup, but the MOSFET itself is identical."},{"question":"When sourcing BSC190N12NS3GATMA1, what's the closest functional second-source?","answer":"The IPD50R950CEAUMA1 is a different class of part — a 500 V CoolMOS device with 950 mOhm Rds(on) and 4.3 A rating. It is not a functional second-source for the 120 V, 44 A, 19 mOhm BSC190N12NS3GATMA1. For a true alternative, look for other 120 V N-channel MOSFETs in a similar PowerTDFN package with comparable Rds(on) and current rating."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC190N12NS3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC190N12NS3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}