{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"BSC150N03LD","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"BSC150N03LD","canonicalUrl":"https://icboms.com/infineon/BSC150N03LD","factsUrl":"https://icboms.com/api/mcp/products/BSC150N03LD","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™3, BSC150N03LD, Dual N-Channel MOSFET, 30V Vds, 8A Id, 15mOhm Rds(on) @ 10V, Logic Level Gate, PG-TDSON-8-4 package, -55°C to 150°C.","salesMarkdown":"## 15 mOhm on-resistance and 6.4 nC gate charge — the switching trade-off The BSC150N03LD: Maximum on-resistance is 15 mOhm at Vgs=10 V and Id=20 A, which keeps conduction losses low in a 30 V bus. Total gate charge is 6.4 nC at 10 V. Input capacitance is 1100 pF at Vds=15 V.","metaTitle":"BSC150N03LD OptiMOS 3 Dual N-Channel MOSFET, 30V 8A 15mOhm","metaDescription":"Infineon BSC150N03LD OptiMOS 3 dual N-channel MOSFET, 30V drain-source, 8A continuous drain, 15mOhm Rds(on) at 10V.","metaKeywords":null},"attributes":{"series":"OptiMOS™3","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™3","Package":"Bulk","FET Type":"2 N-Channel (Dual)","FET Feature":"Logic Level Gate","Power - Max":"26W","Mounting Type":"Surface Mount","Package / Case":"8-PowerVDFN","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"15mOhm @ 20A, 10V","Supplier Device Package":"PG-TDSON-8-4","Gate Charge (Qg) (Max) @ Vgs":"6.4nC @ 10V","Drain to Source Voltage (Vdss)":"30V","Input Capacitance (Ciss) (Max) @ Vds":"1100pF @ 15V","Current - Continuous Drain (Id) @ 25°C":"8A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.4","stockQuantity":0,"priceTiers":[{"qty":742,"price":"$0.40000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c88201c704e93550ce3d0bb359684c53.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is BSC150N03LD suitable for battery management?","answer":"Yes — the dual N-channel configuration with a common drain and logic-level gate works well for battery-pack OR-ing or charge/discharge switching in a 2- to 4-series Li-ion stack (nominal 7.4 V to 14.8 V). The 30 V drain-source rating provides headroom for the pack voltage plus transients."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/BSC150N03LD","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/BSC150N03LD when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}